STT3585_12

STT3585 Elektronische Bauelemente 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The STT3585 provide the designer with best combination of fast switching, low on-resistance and cost effectiveness. The TSOP-6 package is universally used for all commercial-industrial surface mount applications. A E 6 5 4 TSOP-6 L FEATURES   B Low Gate Charge Low On-resistance F DG 1 2 3 C K H J MARKING CODE 3585    = Date Code REF. A B C D E F PACKAGE INFORMATION Package TSOP-6 MPQ 3K Leader Size 7 inch Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. TOP VIEW ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Pulsed Drain Current 1 Power Dissipation Maximum Junction to Ambient Linear Derating Factor Operating Junction & Storage Temperature Range TJ, TSTG 3 Symbol VDS VGS TA = 25°C TA = 70°C ID IDM PD RθJA 20 ±12 3.5 2.8 10 Ratings N-Channel P-Channel Unit -20 ±12 -2.5 V V A A W °C / W W / °C °C -1.97 -10 1.14 110 0.01 -55~150 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 03-Jan-2012 Rev. C Page 1 of 7 STT3585 Elektronische Bauelemente 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate-Threshold Voltage Forward Transconductance Gate-Source Leakage Current N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Drain-Source Leakage Current P-Ch N-Ch P-Ch N-Ch Drain-Source On-Resistance 1 P-Ch N-Ch P-Ch Total Gate Charge1 Gate-Source Charge Gate-Drain Charge Turn-on Delay Time1 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Rg RDS(ON) IDSS Symbol Min. Typ. Static 20 -20 0.5 0.02 -0.01 7 4 4 5 0.7 1 2 2 6 6 8 17 10 16 3 5 430 630 55 50 40 40 1.4 7 Max. 1.2 -1.2 ±100 Unit Test Conditions VGS=0, ID=250μA VGS=0, ID= -250μA Reference to 25°C, ID=1mA Reference to 25°C, ID= -1mA VDS=VGS, ID=250μA VDS=VGS, ID= -250μA VDS=5V, ID=3A VDS= -5V, ID= -2A VGS= ±12V VGS= ±12V VDS=20 V, VGS=0 VDS= -20 V, VGS=0 VDS=16V, VGS=0 VDS= -16V, VGS=0 VGS=4.5V, ID=3.5A VGS= -4.5V, ID= -2.5A VGS=2.5V, ID=1.2A VGS= -2.5V, ID= -2A N-Channel VDS=16V, VGS=4.5V, ID=3A BVDSS △BVDSS/△TJ VGS(th) gfs IGSS V V/°C V S nA ±100 1 -1 10 -25 75 160 125 300 7 8 520 750 1.7 10 μA mΩ nC P-Channel VDS= -16V, VGS= -4.5V, ID= -2A N-Channel VDS=15V, RG=3.3Ω,RD=15Ω VGS=5V, ID=1A nS P-Channel VDS= -10V, RG=3.3Ω,RD=10Ω VGS= -10V, ID= -1A N-Channel VGS=0, VDS=20V, f=1.0MHz pF P-Channel VGS=0, VDS= -20V, f=1.0MHz Ω f=1.0MHz http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 03-Jan-2012 Rev. C Page 2 of 7 STT3585 Elektronische Bauelemente 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Symbol Min. - Typ. 16 20 8 15 Max. 1.2 -1.2 - Unit Test Conditions IS=1.2A, VGS=0 IS= -1.2A, VGS=0 IS=3A, VGS=0 ,dI/dt=100A/μs IS= -2A, VGS=0 ,dI/dt=100A/μs IS=3A, VGS=0 ,dI/dt=100A/μs IS= -2A, VGS=0 ,dI/dt=100A/μs Source-Drain Diode Forward On Voltage1 VSD V Reverse Recovery Time TRR ns Reverse Recovery Charge Qrr nC Notes: 1 Pulse width limited by Max. junction temperature. 2 Pulse width≦300μs, duty cycle≦2%. 2 3 Surface mounted on 1 in copper pad of FR4 board; t≦5 sec. 180°C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 03-Jan-2012 Rev. C Page 3 of 7 STT3585 Elektronische Bauelemente 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET CHARACTERISTICS CURVE (N-Channel) http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 03-Jan-2012 Rev. C Page 4 of 7 STT3585 Elektronische Bauelemente 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET CHARACTERISTICS CURVE (N-Channel) http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 03-Jan-2012 Rev. C Page 5 of 7 STT3585 Elektronische Bauelemente 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET CHARACTERISTICS CURVE (P-Channel) http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 03-Jan-2012 Rev. C Page 6 of 7 STT3585 Elektronische Bauelemente 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET CHARACTERISTICS CURVE (P-Channel) http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 03-Jan-2012 Rev. C Page 7 of 7