STT3599C

STT3599C Elektronische Bauelemente (N-Ch) 3.7 A, 30 V, RDS(ON) 63 m (P-Ch) -2.7 A, -30 V, RDS(ON) 112 m N & P-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. A E TSOP-6 L B FEATURES     F DG K C H J Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe TSOP-6 saves board space. Fast switching speed. High performance trench technology. REF. A B C D E F PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) 30 -30 RDS(on) ( 0.063@VGS= 10V 0.090@VGS= 4.5V 0.112@VGS= -10V 0.172@VGS= -4.5V D1 S1 6 5 D2 4 ID(A) 3.7 3.1 -2.7 -2.2  Gate Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF.  Drain  Drain  Gate  1 2 3 G2  Source  Source G1 S2 ABSOLUTE MAXIMUM RATINGS(TA=25℃ UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Symbol VDS VGS ID @TA=25℃ ID @TA=70℃ IDM IS PD @TA=25℃ PD @TA=70℃ Tj, Tstg Ratings N-Channel P-Channel Unit V V A A A W ℃ Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a Operating Junction and Storage Temperature Range 30 ±20 3.7 2.9 8 1.05 -30 ±20 -2.7 -2.1 -8 -1.05 1.15 0.7 -55 ~ +150 Parameter Maximum Junction to Ambient a Notes a. b. THERMAL RESISTANCE RATINGS N-Channel Symbol Typ Max 93 110 t ≦ 10 sec RJA Steady State 130 150 P-Channel Typ Max 93 110 130 150 Unit ℃/W Surface Mounted on 1” x 1” FR4 Board. Pulse width limited by maximum junction temperature. Any changes of specification will not be informed individually. http://www.SeCoSGmbH.com/ 19-Jul-2010 Rev. A Page 1 of 7 STT3599C Elektronische Bauelemente (N-Ch) 3.7 A, 30 V, RDS(ON) 63 m (P-Ch) -2.7 A, -30 V, RDS(ON) 112 m N & P-Channel Enhancement Mode Mos.FET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate-Threshold Voltage N-Ch P-Ch N-Ch P-Ch N-Ch Zero Gate Voltage Drain Current P-Ch N-Ch P-Ch On-State Drain Current a N-Ch P-Ch N-Ch Drain-Source On-Resistance a Symbol Min. VGS(th) IGSS 1 -1 IDSS ID(on) 5 -5 RDS(ON) gfs VSD - Typ. Max. 1.6 -1.6 4.5nA -4.5nA 12nA -12nA 0.057 0.100 0.075 0.148 10 5 0.80 -0.83 2.5 -2.5 100 -100 1 -1 10 -10 0.063 0.112 0.090 0.172 - Unit V Test Conditions VDS=VGS, ID=250uA VDS=VGS, ID= -250uA VDS= 0 V, VGS= 20 V VDS= 0 V, VGS= -20 V VDS=24 V, VGS=0 V VDS=-24V, VGS=0 V VDS=24V, VGS=0 V, TJ=55℃ VDS= -24V, VGS=0 V, TJ=55℃ VDS = 5V, VGS=10 V VDS = -5V, VGS= -10 V VGS=10V, ID= 3.7A VGS=-10V, ID= -2.7A VGS=4.5V, ID= 3.1A VGS=-4.5V, ID= -2.2A VDS= 5V, ID= 3.7A VDS= -5V, ID= 3.1A IS= 1.05A, VGS= 0V IS= -1.05A, VGS= 0V Gate-Body Leakage Current uA uA A P-Ch N-Ch P-Ch Ω Forward Transconductance a Diode Forward Voltage a N-Ch P-Ch N-Ch P-Ch S S http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 19-Jul-2010 Rev. A Page 2 of 7 STT3599C Elektronische Bauelemente (N-Ch) 3.7 A, 30 V, RDS(ON) 63 m (P-Ch) -2.7 A, -30 V, RDS(ON) 112 m N & P-Channel Enhancement Mode Mos.FET DYNAMIC b Total Gate Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Qg Qgs Qgd Ciss Coss Crss Td(on) Tr Td(off) Tf 2.2 3.8 0.5 0.6 0.8 1.5 184 378 62 126 30 52 5 5 12 15 13 20 7 20 5 8 1 2 2 3 400 800 200 300 200 300 10 10 30 30 30 40 20 40 nS P-Channel VDD= -15V, RGEN= 15　 VGS= -4.5V, ID= -1A N-Channel VDD= 15V, RGEN= 15　, VGS= 4.5V, ID= 1A pF P-Channel VDS= -15V, VGS= 0V, f= 1MHz nC P-Channel VDS= -15V, VGS= -4.5V, ID= -3.1A N-Channel VDS=15V, VGS= 4.5V, ID= 2.7A Gate-Source Charge Gate-Drain Charge Input Capacitance N-Channel VDS= 15V, VGS= 0V, f= 1MHz Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Notes a. b. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 19-Jul-2010 Rev. A Page 3 of 7 STT3599C Elektronische Bauelemente (N-Ch) 3.7 A, 30 V, RDS(ON) 63 m (P-Ch) -2.7 A, -30 V, RDS(ON) 112 m N & P-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVES (N-Channel) http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 19-Jul-2010 Rev. A Page 4 of 7 STT3599C Elektronische Bauelemente (N-Ch) 3.7 A, 30 V, RDS(ON) 63 m (P-Ch) -2.7 A, -30 V, RDS(ON) 112 m N & P-Channel Enhancement Mode Mos.FET http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 19-Jul-2010 Rev. A Page 5 of 7 STT3599C Elektronische Bauelemente (N-Ch) 3.7 A, 30 V, RDS(ON) 63 m (P-Ch) -2.7 A, -30 V, RDS(ON) 112 m N & P-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVES (P-Channel) http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 19-Jul-2010 Rev. A Page 6 of 7 STT3599C Elektronische Bauelemente (N-Ch) 3.7 A, 30 V, RDS(ON) 63 m (P-Ch) -2.7 A, -30 V, RDS(ON) 112 m N & P-Channel Enhancement Mode Mos.FET http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 19-Jul-2010 Rev. A Page 7 of 7