STT3962N

STT3962N Elektronische Bauelemente N-Channel Enhancement Mode Mos.FET 2.3 A, 60 V, RDS(ON) 0.153  RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are DC-DC converters, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. A E 6 5 4 TSOP-6 L B FEATURES   F DG 1 2 3 C K H J Low RDS(on) provides higher efficiency and extends battery life. Miniature TSOP-6 surface mount package saves board space. PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) 60 RDS(on) ( 0.153@VGS= 10V 0.185@VGS= 4.5V ID(A) 2.3 2.1 G S G D S D REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current Continuous Source Current (Diode Conduction) a Power Dissipation a b Symbol VDS VGS ID @TA=25℃ ID @TA=70℃ IDM IS PD @TA=25℃ PD @TA=70℃ Tj, Tstg Ratings Maximum Unit V V A A A W °C Operating Junction and Storage Temperature Range 60 ±20 2.3 1.9 8 1.05 1.15 0.7 -55 ~ 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambient a Notes a. b. Surface Mounted on 1” x 1” FR4 Board. Pulse width limited by maximum junction temperature. t ≦ 10 sec Steady State Symbol RJA Maximum 100 166 Unit °C / W http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 20-Aug-2010 Rev. B Page 1 of 4 STT3962N Elektronische Bauelemente N-Channel Enhancement Mode Mos.FET 2.3 A, 60 V, RDS(ON) 0.153  ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Current Symbol Min. VGS(th) IGSS 1 - Typ. Max. 10 0.80 100 1 Unit V uA Test Conditions VDS=VGS, ID= 250uA VDS= 0V, VGS= 20V VDS= 48V, VGS= 0V Zero Gate Voltage Drain Current IDSS 10 0.153 uA VDS= 48V, VGS=0 V, TJ= 55°C A VDS = 5V, VGS= 10 V VGS= 10V, ID= 2.3A Ω 0.185 S V VGS= 4.5V, ID= 2.1A VDS= 5V, ID= 2.3A IS= 1.05A, VGS= 0V On-State Drain Current a ID(on) 5 - Drain-Source On-Resistance a RDS(ON) Forward Transconductance a Diode Forward Voltage a gfs VSD - DYNAMIC b Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Notes a. b. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. Guaranteed by design, not subject to production testing. Qg Qgs Qgd Td(on) Tr Td(off) Tf - 3 0.6 1.0 5 12 13 7 nS VDD= 15V, VGS= 4.5V, RGEN= 15, ID= 1A nC VDS= 15V, VGS= 4.5V, ID= 2.3A http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 20-Aug-2010 Rev. B Page 2 of 4 STT3962N Elektronische Bauelemente N-Channel Enhancement Mode Mos.FET 2.3 A, 60 V, RDS(ON) 0.153  CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 20-Aug-2010 Rev. B Page 3 of 4 STT3962N Elektronische Bauelemente N-Channel Enhancement Mode Mos.FET 2.3 A, 60 V, RDS(ON) 0.153  CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 20-Aug-2010 Rev. B Page 4 of 4