STT3981_10

STT3981 Elektronische Bauelemente -1.6 A, -20 V, RDS(ON) 180 mΩ P-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The STT3981 utilized advance processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The STT3981 is universally used for all commercial-industrial applications. FEATURES Low On-Resistance Low Gate Charge PACKAGE DIMENSIONS REF. A A1 A2 c D E E1 Millimeter Min. Max. 1.10 Max 0 0.10 0.70 1.00 0.12 Ref 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 Ref 0.60 Ref 0° 10° 0.30 0.50 0.95 Ref 1.90 Ref ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range 1 Symbol VDS VGS ID @TA=25℃ ID @TA=70℃ IDM PD @TA=25℃ TJ, TSTG Ratings -20 ±8 -1.6 -1.3 -8 0.8 0.006 -55 ~ +150 Unit V V A A W W/℃ ℃ THERMAL DATA Parameter Thermal Resistance Junction-ambient3 (Max) Symbol RθJA Ratings 150 Unit ℃/W 10-Feb-2010 Rev. C Page 1 of 5 STT3981 Elektronische Bauelemente -1.6 A, -20 V, RDS(ON) 180 mΩ P-Channel Enhancement Mode Mos.FET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Drain-Source Leakage Current (Tj=25℃) Drain-Source Leakage Current (Tj=70℃) Typ Max Unit Test Conditions BVDSS VGS(th) IGSS IDSS -20 -0.4 - 100 160 260 4 -1.1 ±100 -1 -20 150 210 300 - V V nA uA VGS = 0, ID=250 uA VDS = VGS, ID=250 uA VGS = ±8 V VDS = -20 V, VGS = 0 VDS = -16 V, VGS = 0 VGS = -4.5 V, ID = -1.9 A Drain-Source On-Resistance RDS(ON) - mΩ VGS = -2.5 V, ID = -1.6 A VGS = -1.8 V, ID = -0.7 A Forward Transconductance Diode Forward Voltage 2 gfs VSD - S V VDS = -5V, ID = -1.9A IS = -1.0A, VGS = 0V -0.84 -1.1 Dynamic Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Charge Turn-on Delay Time2 Rise Time Turn-off Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: 2. Pulse width≦300us, duty cycle≦2%. 3. Surface mounted on 1 in copper pad of FR4 board; 180 °C/W when mounted on minimum copper pad. 2 Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss - 6 0.52 1.02 50 40 168 64 450 60 47 7.5 65 60 180 75 - nC ID = -1.9 A VDS = -10 V VGS = -4.5 V VDS = -10 V ID = -1 A VGEN = -4.5 V RG = 6 Ω R L = 10 Ω VGS = 0 V VDS = -15 V f = 1.0 MHz nS pF 1. Pulse width limited by maximum junction temperature. 010-Feb-2010 Rev. C Page 2 of 5 STT3981 Elektronische Bauelemente -1.6 A, -20 V, RDS(ON) 180 mΩ P-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVES Output Characteristics 8 7 VGS = 5 thru 3 V 8 7 Transfer Characteristics TC = - 55 C 25 C 125 C I D - Drain Current (A) 2.5 V 5 4 3 2 1 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 1.5 V 2V I D - Drain Current (A) 6 6 5 4 3 2 1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.6 0.5 VGS = 1.8 V 400 350 300 250 200 150 100 50 Crss 0.0 0 1 2 3 4 5 6 7 ID - Drain Current (A) 0 0 4 Capacitance ) r DS(on) - On-Resistance ( 0.4 0.3 0.2 0.1 C - Capacitance (pF) Ciss VGS = 2.5 V VGS = 4.5 V Coss 8 12 16 20 VDS - Drain-to-Source Voltage (V) Gate Charg e 6 VGS - Gate-to -Sou rce Vo ltag e (V) 1.6 On-Resistance vs. Junction Temperatur e VGS = 4.5 V ID = 1.9 A 5 V DS = 10 V I D = 1.9 A 1.4 rDS(on) - On-Resiistance (Normalized) 4 1.2 3 1.0 2 1 0.8 0 0 1 2 3 4 5 6 7 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature ( C) 10-Feb-2010 Rev. C Page 3 of 5 STT3981 Elektronische Bauelemente -1.6 A, -20 V, RDS(ON) 180 mΩ P-Channel Enhancement Mode Mos.FET Source-Drain Diode Forward Voltage 10 0.5 On-Resistance vs. Gate-to-Source Voltage 0.4 ID = 1.9 A I S - Source Current (A) r DS(on) - On-Resistance ( ) 1 TJ = 150 C TJ = 25 C 0.1 0.00 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) 0.3 0.2 0.1 0.0 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.3 25 Single Pulse Power, Junction-to-Ambient 0.2 V GS(th) Variance (V) 20 ID = 250 A Power (W) 0.1 15 0.0 10 - 0.1 5 - 0.2 - 50 0 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature ( C) 100 Safe Operating Area, Junction-to-Case IDM Limited 10 I D - Drain Current (A) rDS(on) Limited 1 ID(on) Limited 0.1 TC = 25 C Single Pulse BVDSS Limited 1 10 1 ms 10 ms 100 ms 10 s, 1 s dc 0.01 0.1 100 VDS - Drain-to-Source Voltage (V) 10-Feb-2010 Rev. C Page 4 of 5 STT3981 Elektronische Bauelemente -1.6 A, -20 V, RDS(ON) 180 mΩ P-Channel Enhancement Mode Mos.FET 2 1 Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 132 C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 -1 1 10 100 600 Square Wave Pulse Duration (sec) 2 1 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (sec) 1 10 10-Feb-2010 Rev. C Page 5 of 5