STT3998N

STT3998N Elektronische Bauelemente Dual N-Ch Enhancement Mode Mos.FET 3.7 A, 20 V, RDS(ON) 58 m RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. 6 TSOP-6 A E 5 4 L B FEATURES  F DG 1 2 3 C K H J    Low RDS(on) provide higher efficiency and extends battery life. Low thermal impedance copper leadframe TSOP-6 saves board space. Fast switching speed. High performance trench technology. REF. A B C D E F PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) 20 RDS(on) (m 58@VGS= 4.5V 82@VGS= 2.5V ID(A) 3.7 3.1 G S G D S D Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Symbol VDS VGS TA= 25°C TA= 70°C Ratings Maximum Unit V V A A A W °C ID IDM IS Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a Operating Junction and Storage Temperature Range TA= 25°C TA= 70°C PD Tj, Tstg 20 ±12 3.7 2.9 8 1.05 1.15 0.7 -55 ~ 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambient a Notes a. b. Surface Mounted on 1” x 1” FR4 Board. Pulse width limited by maximum junction temperature. Any changes of specification will not be informed individually. Symbol t ≦ 10 sec Steady State Typ. 93 130 Max. 110 150 Unit °C / W RJA http://www.SeCoSGmbH.com/ 27-Aug-2010 Rev. A Page 1 of 2 STT3998N Elektronische Bauelemente Dual N-Ch Enhancement Mode Mos.FET 3.7 A, 20 V, RDS(ON) 58 m ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance a Diode Forward Voltage a Symbol Min. VGS(th) IGSS IDSS ID(on) RDS(ON) gfs VSD 0.7 30 - Typ. Max. 10 0.8 1 0.1 Unit V uA uA Test Conditions VDS=VGS, ID= 250uA VDS= 0V, VGS= 12V VDS= 16V, VGS= 0V VDS= 16V, VGS= 0V, TJ= 55°C 1 58 mΩ 82 S V A VDS = 5V, VGS= 4.5V VGS= 4.5V, ID= 3.7A VGS= 2.5V, ID= 2.7A VDS= 10V, ID= 6.8A IS= 1.05A, VGS= 0V DYNAMIC b Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Notes a. b. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. Guaranteed by design, not subject to production testing. Qg Qgs Qgd Td(on) Tr Td(off) Tf - 7.5 0.6 1.0 5 12 13 7 nS VDD= 10V, VGS= 4.5V, RGEN= 15, ID= 1A nC VDS= 10V, VGS= 4.5V, ID= 3.7A http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 27-Aug-2010 Rev. A Page 2 of 2