STT4443

STT4443 Elektronische Bauelemente -2.3A , -30V , RDS(ON) 120 m P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION STT4443 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The TSOP-6 package is universally used for all commercial-industrial applications. A E 6 5 4 TSOP-6 L B FEATURES    Simple Drive Requirement Smaller Outline Package Surface mount package F DG 1 2 3 C K H J MARKING 4443  Date Code REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. PACKAGE INFORMATION Package TSOP-6 MPQ 3K Leader Size 7 inch TOP VIEW ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Pulsed Drain Current 1 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg TA=25°C TA=25°C TA=70°C Symbol VDS VGS ID IDM PD Ratings -30 ±20 -2.3 -1.8 -10 1.14 0.01 -55~150 Unit V V A A W W / °C °C Thermal Resistance Rating Maximum Junction to Ambient 3 RJA 110 °C / W http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 02-Dec-2011 Rev. B Page 1 of 4 STT4443 Elektronische Bauelemente -2.3A , -30V , RDS(ON) 120 m P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Current Drain-Source Leakage Current Drain-Source On-Resistance 2 Forward Transconductance 2 Symbol BVDSS VGS(th) IGSS IDSS Min. -30 -1 - Typ. 4 Max. -2.5 Unit V V nA μA Teat Conditions VGS=0, ID= -250uA VDS=VGS, ID= -250uA VGS=±20V VDS= -30V, VGS=0 VDS= -24V, VGS=0 VGS= -10V, ID= -2A VGS= -4.5V, ID= -1A VDS= -5V, ID= -2A Static ±100 -1 -25 120 170 - RDS(ON) gfs mΩ S Dynamic Total Gate Charge Qg Qgs Qgd 2 - 3 0.78 1.6 7 6 15 7.5 260 55 44 4.3 5 Ω pF nS nC Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Transfer Capacitance 2 2 VDS= -25V, VGS= -4.5V, ID= -2A VDS= -15V, VGS= -5V, RG=3.3Ω, RD=15Ω, ID= -1A VGS=0, VDS= -25V, f=1.0MHz f=1.0MHz Td(on) Tr Td(off) Tf Ciss Coss Crss Rg Source-Drain Diode Diode Forward Voltage VSD TRR QRR 15 7 -1.2 V ns nC IS= -0.9A, VGS=0 IS= -2A, VGS=0 dI/dt=100A/μs Reverse Recovery Time Reverse Recovery Charge Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse test 2 3. Surface mounted on 1 in copper pad of FR4 board, t≦5sec; 180°C/W when mounted on Min. copper pad. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 02-Dec-2011 Rev. B Page 2 of 4 STT4443 Elektronische Bauelemente -2.3A , -30V , RDS(ON) 120 m P-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 02-Dec-2011 Rev. B Page 3 of 4 STT4443 Elektronische Bauelemente -2.3A , -30V , RDS(ON) 120 m P-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 02-Dec-2011 Rev. B Page 4 of 4