STT6602

STT6602 Elektronische Bauelemente N-Ch: 3.3A, 30V, RDS(ON) 65 mΩ P-Ch: -2.3A, -30V, RDS(ON) 120 mΩ N & P-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The STT6602 uses advanced trench technology to provide excellent on-resistance and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. The TSOP-6 package is universally used for all commercial-industrial surface mount applications. A E TSOP-6 L 6 5 4 B FEATURES Low Gate Change Low On-resistance 1 2 3 F DG K C H J MARKING REF. 6602 Date Code A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. PACKAGE INFORMATION Package TSOP-6 MPQ 3K Leader Size 7 inch TOP VIEW ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 2 Symbol VDS VGS TA=25° C TA=70° C ID IDM PD N-Channel Unit P-Channel 30 ±20 3.3 2.6 10 1.14 0.01 -30 ±20 -2.3 -1.8 -10 V V A A W W/° C ° C Power Dissipation @TA=25° C Linear Derating Factor Operating Junction and Storage Temperature Range TJ, TSTG -55~150 Thermal Resistance Rating Maximum Junction to Ambient 2 RθJA 110 ° /W C Notes: 1. Pulse width limited by Max. junction temperature. 2. Surface mounted on 1 in2 copper pad of FR4 board, t≦5sec; 180° / W when mounted on Min. copper pad. C http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Aug-2011 Rev. A Page 1 of 7 STT6602 Elektronische Bauelemente N-Ch: 3.3A, 30V, RDS(ON) 65 mΩ P-Ch: -2.3A, -30V, RDS(ON) 120 mΩ N & P-Channel Enhancement Mode Mos.FET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Drain-Source Leakage Current P-Ch N-Ch P-Ch N-Ch Drain-Source On-Resistance 1 Symbol Min. 30 -30 1 -1 - Typ. 4 2 3.1 3 1.2 0.78 1.6 1.6 3.3 7 2.5 6 13.2 15 1.7 7.5 200 260 40 55 20 44 2.3 4.3 Max. 2.5 -2.5 ±100 Unit Test Conditions VGS=0, ID=250µA VGS=0, ID=-250µA VDS=VGS, ID=250µA VDS=VGS, ID= -250µA VDS=5V, ID=3A VDS= -5V, ID= -2A VGS= ±20V VGS= ±20V VDS=30 V, VGS=0 Static Drain-Source Breakdown Voltage Gate-Threshold Voltage BVDSS VGS(th) V V Forward Transconductance gfs S Gate-Source Leakage Current IGSS ±100 1 -1 25 -25 65 120 90 170 3.0 5 nA IDSS - uA VDS= -30 V, VGS=0 VDS=24V, VGS=0 VDS= -24V, VGS=0 VGS=10V, ID=3A P-Ch N-Ch P-Ch RDS(ON) - m VGS= -10V, ID= -2A VGS=4.5V, ID=2A VGS= -4.5V, ID= -1A N-Channel VDS=25V, VGS= 4.5V, ID= 3A Total Gate Charge 1 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 1 Qg - Gate-Source Charge Qgs nC P-Channel VDS= -25V, VGS= -4.5V, ID= -2.0A Gate-Drain Charge Qgd Turn-on Delay Time N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Td(on) Rise Time Tr N-Channel VDS= 15V, RG= 3.3 ,RD=15 VGS= 10V, ID= 1A nS P-Channel VDS= -15V, RG= 3.3 ,RD=15 VGS=-5V, ID= -1A Turn-off Delay Time Td(off) Fall Time Tf Input Capacitance Ciss N-Channel VGS=0, VDS=25V, f=1.0MHz pF P-Channel VGS=0, VDS=-25V, f=1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Notes: 1. Pulse test http://www.SeCoSGmbH.com/ Rg f=1.0MHz Any changes of specification will not be informed individually. 15-Aug-2011 Rev. A Page 2 of 7 STT6602 Elektronische Bauelemente N-Ch: 3.3A, 30V, RDS(ON) 65 mΩ P-Ch: -2.3A, -30V, RDS(ON) 120 mΩ N & P-Channel Enhancement Mode Mos.FET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Source-Drain Diode Forward On Voltage 1 N-Ch P-Ch VSD - 14 15 7 7 1.2 -1.2 - V IS=0.9A, VGS=0 IS= -0.9A, VGS=0 Reverse Recovery Time N-Ch P-Ch Trr - ns IS=3A, VGS=0 ,dI/dt=100A/µs IS= -2A, VGS=0 ,dI/dt=100A/µs Reverse Recovery Charge Notes: 1. Pulse test N-Ch P-Ch Qrr - nC IS=3A, VGS=0 ,dI/dt=100A/µs IS= -2A, VGS=0 ,dI/dt=100A/µs http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Aug-2011 Rev. A Page 3 of 7 STT6602 Elektronische Bauelemente N-Ch: 3.3A, 30V, RDS(ON) 65 mΩ P-Ch: -2.3A, -30V, RDS(ON) 120 mΩ N & P-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVES (N-Channel) http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Aug-2011 Rev. A Page 4 of 7 STT6602 Elektronische Bauelemente N-Ch: 3.3A, 30V, RDS(ON) 65 mΩ P-Ch: -2.3A, -30V, RDS(ON) 120 mΩ N & P-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVES (N-Channel) http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Aug-2011 Rev. A Page 5 of 7 STT6602 Elektronische Bauelemente N-Ch: 3.3A, 30V, RDS(ON) 65 mΩ P-Ch: -2.3A, -30V, RDS(ON) 120 mΩ N & P-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVES (P-Channel) http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Aug-2011 Rev. A Page 6 of 7 STT6602 Elektronische Bauelemente N-Ch: 3.3A, 30V, RDS(ON) 65 mΩ P-Ch: -2.3A, -30V, RDS(ON) 120 mΩ N & P-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVES (P-Channel) http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Aug-2011 Rev. A Page 7 of 7