STT6802

STT6802 Elektronische Bauelemente 3.3A , 30V , RDS(ON) 65 mΩ N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION STT6802 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The TSOP-6 package is universally used for all commercial-industrial applications. A E TSOP-6 L 6 5 4 B FEATURES 1 2 3 Simple Drive Requirement Smaller Outline Package Surface mount package F DG K C H J MARKING 6802 Date Code REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. PACKAGE INFORMATION Package TSOP-6 MPQ 3K Leader Size 7 inch TOP VIEW ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range TJ, TSTG 1 3 Symbol VDS VGS TA=25° C TA=70° C ID IDM TA=25° C PD Ratings 30 ±20 3.3 Unit V V A 2.6 10 1.14 0.01 -55~150 A W W/° C ° C Thermal Resistance Rating Maximum Junction to Ambient 3 RθJA 110 ° /W C http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Aug-2011 Rev. A Page 1 of 4 STT6802 Elektronische Bauelemente 3.3A , 30V , RDS(ON) 65 mΩ N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Current Drain-Source Leakage Current Symbol Min. Typ. Max. Unit V V nA µA Teat Conditions VGS=0, ID=250uA VDS=VGS, ID=250uA VGS=±20V VDS=30V, VGS=0 VDS=24V, VGS=0, TJ=70°C Static BVDSS VGS(th) IGSS IDSS 30 1.0 RDS(ON) gfs 4.0 2.5 ±100 1 25 65 Drain-Source On-Resistance Forward Transconductance 2 m 90 S VGS=10V, ID=3A VGS=4.5V, ID=2A VDS=5V, ID=3.0A Dynamic Total Gate Charge 2 Qg Qgs Qgd 2 - 3.1 1.2 1.6 3.3 2.5 13.2 1.7 200 40 20 2.3 nS 3.0 pF nC Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Transfer Capacitance VDS=25V, VGS=4.5V, ID=3.0A VDS=15V, VGS=10V, RGEN=3.3 , RD=15 , ID=1A Td(on) Tr Td(off) Tf Ciss Coss Crss Rg VGS=0,VDS=25V,f=1.0MHz f=1.0MHz Source-Drain Diode Diode Forward Voltage 2 VSD TRR QRR - 14 7.0 1.2 - V ns nC IS=0.9A, VGS=0V IS=3.0A, VGS=0V dI/dt=100A/µs Reverse Recovery Time Reverse Recovery Charge Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse test 3. Surface mounted on 1 in2 copper pad of FR4 board, t≦5sec; 180℃/W when mounted on Min. copper pad. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Aug-2011 Rev. A Page 2 of 4 STT6802 Elektronische Bauelemente 3.3A , 30V , RDS(ON) 65 mΩ N-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Aug-2011 Rev. A Page 3 of 4 STT6802 Elektronische Bauelemente 3.3A , 30V , RDS(ON) 65 mΩ N-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Aug-2011 Rev. A Page 4 of 4