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TB6S

TB6S

  • 厂商:

    SECOS

  • 封装:

  • 描述:

    TB6S - Voltage 200V ~ 1000V 1.0 Amp Silicon Bridge Rectifiers - SeCoS Halbleitertechnologie GmbH

  • 数据手册
  • 价格&库存
TB6S 数据手册
TB2S ~ TB10S Elektronische Bauelemente Voltage 200V ~ 1000V 1.0 Amp Silicon Bridge Rectifiers RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES     Glass passivated chip junction High surge overload rating:30A peak Save space on printed circuit boards High temperature soldering guaranteed: 260°C / 10 seconds at 5 lbs. (2.3 kg) tension TBS A + MECHANICAL DATA     Case: Molded plastic body over passivated junctions Terminals: Plated leads solderable per MIL-STD-750, Method 2026 Polarity: Polarity symbols marked on body Dimensions in inches and (millimeters) Mounting position: Any B F C D E H I REF. F G H I Millimeter Min. 6.30 0.05 4.25 0.50 Max. 6.70 0.15 4.55 0.70 G PACKAGE INFORMATION Package TBS MPQ 4K Leader Size 13 inch REF. A B C D E Millimeter Min. 4.25 4.85 1.15 0.60 3.90 Max. 4.55 5.15 1.45 0.70 4.10 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Rating 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.) Parameter Maximum Recurrent Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Instantaneous Forward Voltage @ IFM=0.4A Maximum Average Forward Rectified Current @ TL=100°C Peak Forward Surge Current, 8.3ms single half sine-wave superimposed on rated load (JEDEC method) On aluminum Typical thermal resistance substrate junction to ambient On glass-epoxy substrate Typical thermal resistance junction to lead Maximum DC Reverse Current at Rated DC Blocking Voltage@ TA=25°C Operating & Storage Temperature Range Notes: 1. On glass epoxy P.C.B. 2. On aluminum substrate. http://www.SeCoSGmbH.com/ Symbol VRRM VRMS VDC VF IF(AV) Part Number TB2S 200 140 200 TB4S 400 280 400 TB6S 600 420 600 0.95 0.8 1 1.0 2 30 62.5 TB8S 800 560 800 TB10S 1000 700 1000 Unit V V V V A IFSM A RθJA 80 RθJL IR TJ,TSTG 25 10 -55~150 °C / W  A °C Any changes of specification will not be informed individually. 14-Feb-2012 Rev. B Page 1 of 2 TB2S ~ TB10S Elektronische Bauelemente Voltage 200V ~ 1000V 1.0 Amp Silicon Bridge Rectifiers RATINGS AND CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 14-Feb-2012 Rev. B Page 2 of 2

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