UMD2N

UMD2N Elektronische Bauelemente NPN-PNP built-in resistors Multi-Chip Digital Transistor SOT-363 .055(1.40) .047(1.20) .026TYP (0.65TYP) .021REF (0.525)REF .096(2.45) .085(2.15) .053(1.35) .045(1.15) 8 o 0 o Features * DTA124E and DTC124E transistors are built-in a SOT-363 package. * Transistor elements are independent, eliminating interference. * Mounting cost and area can be cut in half. (3) (2) R1 R2 D T r1 D T r2 R2 R1 (4) (5) (6) (1) .018(0.46) .010(0.26) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .006(0.15) .003(0.08) .004(0.10) .000(0.00) .039(1.00) .035(0.90) .043(1.10) .035(0.90) R1=R2=22K Dimensions in inches and (millimeters) MARKING:D2 Electrical Characteristics( Tamb=25 C unless otherwise specified) O Parameter Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature Symbol VCC VIN IO IC(MAX) Pd Tj Tstg Limits 50 -10~40 30 -100 150(TOTAL) 150 -55~150 Unit V V mA mW ℃ ℃ Electrical characteristics (Ta=25℃) Parameter Input voltage Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT 56 15.4 0.8 22 1 250 28.6 1.2 MHz VCE=10V ,IE=-5mA,f=100MHz KΩ 3 0.3 0.36 0.5 Min. Typ Max. 0.5 Unit V V mA µA Conditions VCC=5V ,IO=100μA VO=0.2V ,IO=10mA IO/II=10mA/0.5mA VI=5V VCC=50V, VI=0 VO=5V,IO=5mA http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jan-2006 Rev. A Page 1 of 3 UMD2N Elektronische Bauelemente NPN-PNP built-in resistors Multi-Chip Digital Transistor DTr1 (NPN) http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jan-2006 Rev. A Page 2 of 3 UMD2N Elektronische Bauelemente NPN-PNP built-in resistors Multi-Chip Digital Transistor http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jan-2006 Rev. A Page 3 of 3