UMD3N

UMD3N Elektronische Bauelemente NPN-PNP built-in resistors Multi-Chip Digital Transistor SOT-363 .055(1.40) .047(1.20) .026TYP (0.65T YP) 4 8 o 0 o Features * DTA114E and DTC114E transistors are built-in a SOT-363 package. * Transistor elements are independent, eliminating interference. * Mounting cost and area can be cut in half. (3) (2) R1 R2 D T r1 D T r2 R2 R1 (4) (5) (6) (1) 6 5 .021REF (0.525)REF .096(2.45) .085(2.15) .053(1.35) .045(1.15)  1 2 3 .018(0.46) .010(0.26) .006(0.15) .003(0.08) .004(0.10) .000(0.00) .039(1.00) .035(0.90) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .043(1.10) .035(0.90) MARKING:D3 R1=R2=10K Dimensions in inches and (millimeters) Electrical Characteristics( Tamb=25 C unless otherwise specified) O Parameter Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature Symbol VCC VIN IO IC(MAX) Pd Tj Tstg Limits 50 -10~40 50 100 150(TOTAL) 150 -55~150 Unit V V mA mW ℃ ℃ Electrical characteristics (Ta=25℃) Parameter Input voltage Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT 30 7 0.8 10 1 250 13 1.2 MHz VCE=10V ,IE=-5mA,f=100MHz KΩ 3 0.3 0.88 0.5 Min. Typ Max. 0.5 Unit V V mA µA Conditions VCC=5V ,IO=100μA VO=0.3V ,IO=10mA IO/II=10mA/0.5mA VI=5V VCC=50V, VI=0 VO=5V,IO=5mA http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jan-2006 Rev. B Page 1 of 2 UMD3N Elektronische Bauelemente DTr1 (NPN) 100 50 VO=0.3V NPN-PNP built-in resistors Multi-Chip Digital Transistor 10m 5m OUTPUT CURRENT : Io (A) VCC=5V 1k 500 DC CURRENT GAIN : GI VO=5V Ta=100˚C 25˚C −40˚C INPUT VOLTAGE : VI (on) (V) 20 10 5 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m Ta=−40˚C 25˚C 100˚C 2m 1m 500µ 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 Ta=100˚C 25˚C −40˚C 200 100 50 20 10 5 2 0.5 1 1.5 2 2.5 3 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI (off) (V) OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) Fig.2 Output current vs. input voltage (OFF characteristics) 1 500m OUTPUT VOLTAGE : VO (on) (V) Fig.3 DC current gain vs. output current lO/lI=20 Ta=100˚C 25˚C −40˚C 200m 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current DTr2 (PNP) −100 −50 VO=−0.3V −10m −5m OUTPUT CURRENT : Io (A) VCC=−5V 1k 500 DC CURRENT GAIN : GI VO=−5V INPUT VOLTAGE : VI (on) (V) −20 −10 −5 −2 −1 Ta=−40˚C 25˚C 100˚C −2m −1m −500µ −200µ −100µ −50µ −20µ −10µ −5µ −2µ −1µ 0 Ta=100˚C 25˚C −40˚C 200 100 50 20 10 5 2 Ta=100˚C 25˚C −40˚C −500m −200m −100m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m −0.5 −1 −1.5 −2 −2.5 −3 1 −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI (off) (V) OUTPUT CURRENT : IO (A) Fig.5 Input voltage vs. output current (ON characteristics) Fig.6 Output current vs. input voltage (OFF characteristics) −1 −500m Fig.7 DC current gain vs. output current lO/lI=20 Ta=100˚C 25˚C −40˚C OUTPUT VOLTAGE : VO (on) (V) −200m −100m −50m −20m −10m −5m −2m −1m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m OUTPUT CURRENT : IO (A) Fig.8 Output voltage vs. output current http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jan-2006 Rev. B Page 2 of 2