UMD6N

UMD6N Elektronische Bauelemente Dual NPN+PNP Digital Transistors (Built-in Resistors) RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES    DTA143T(PNP) and DTC143T(NPN) transistors are built-in a package. Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. SOT-363 A E L EQUIVALENT CIRCUIT F DG B  C K H J REF. A B C D E F MARKING：D6 Millimeter Min. Max. 2.00 2.20 2.15 2.45 1.15 1.35 0.90 1.10 1.20 1.40 0.15 0.35 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.15 8° 0.650 TYP. ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power dissipation Junction & Storage temperature Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC PC TJ, TSTG Value 50 50 5 100 150 150, -55 ~ 150 Unit V V V mA mW ℃ ABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS at Ta = 25°C Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current transfer ratio Input resistance Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) hFE R1 fT Min. 50 50 5 100 3.29 - Typ. 4.7 250 Max. 0.5 0.5 0.3 600 6.11 - Unit V V A A V K MHz Test Conditions IC= 50A IC= 1mA IE= 50A VCB= 50V VEB= 4V IC= 5mA, IB= 0.25mA VCE= 5V, IC= 1mA VCE= 10V, IE= -5mA, f=100MHz http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 30-Jun-2010 Rev. A Page 1 of 2 UMD6N Elektronische Bauelemente Dual NPN+PNP Digital Transistors (Built-in Resistors) CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 30-Jun-2010 Rev. A Page 2 of 2