UMH13N

UMH13N Elektronische Bauelemente Dual NPN+PNP Digital Transistors (Built-in Resistors) RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Two DTC144T chips in a package. SOT-363 MARKING H13 PACKAGE INFORMATION Package SOT-363 MPQ 3K Leader Size 7 inch REF. A B C D E F Millimeter Min. Max. 2.00 2.20 2.15 2.45 1.15 1.35 0.90 1.10 1.20 1.40 0.15 0.35 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.15 8° 0.650 TYP. Top View ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction & Storage temperature Symbol VCBO VCEO VEBO IC PD TJ, TSTG Value 50 50 5 100 150 150, -55 ~ 150 Unit V V V mA mW ° C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current transfer ratio Input resistance Transition frequency http://www.SeCoSGmbH.com/ Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) hFE R1 fT Min. 50 50 5 100 32.9 - Typ. 250 Max. 0.5 0.5 0.3 600 61.1 - Unit V V µA µA V Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=50V, IE=0 VEB=4V, IC=0 IC=5mA, IB=0.5mA VCE=5V, IC=1mA K MHz VCE=10V, IC=5mA, f=100MHz Any changes of specification will not be informed individually. 1-Nov-2011 Rev. A Page 1 of 1