UMH15N

UMH15N Elektronische Bauelemente RoHS Compliant Product NPN Multi-Chip Built-in Resistors Transistor SOT-363 Features * Two DTC144T chips in a package * Transistor elements are independent, eliminating interference. * Mounting cost and area can be cut in half. .055(1.40) .047(1.20) .026TYP (0.65TYP) .021REF (0.525)REF 8 o 0 o .096(2.45) .085(2.15) .053(1.35) .045(1.15) .018(0.46) .010(0.26) .014(0.35) .006(0.15) .006(0.15) .003(0.08) .004(0.10) .000(0.00) .039(1.00) .035(0.90) MARKING： H15 .087(2.20) .079(2.00) .043(1.10) .035(0.90) Dimensions in inches and (millimeters) Absolute maximum ratings(Ta=25℃) Parameter Collector-base voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC PC Tj Tstg Limits 50 50 5 100 150 150 -55~150 Unit V V V mA mW ℃ ℃ Collector-emitter voltage Emitter-base voltage Collector current Collector Power dissipation Junction temperature Storage temperature Electrical characteristics (Ta=25℃) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current transfer ratio Input resistance Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) hFE R1 fT 100 32.9 47 250 Min. 50 50 5 0.5 0.5 0.3 600 61.1 KΩ MHz VCE=10V ,IE=-5mA,f=100MHz Typ Max. Unit V V V μA μA V Conditions IC=50μA IC=1mA IE=50μA VCB=50V VEB=4V IC=10mA,IB=1mA VCE=5V,IC=1mA http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jan-2006 Rev. A Page 1 of 2 UMH15N Elektronische Bauelemente NPN Multi-Chip Built-in Resistors Transistor Typical Characteristics http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jan-2006 Rev. A Page 2 of 2