UMZ1N

UMZ1N Elektronische Bauelemente 0.15 W, ±150 mA, ±60 V Silicon Epitaxial Planar Power Management (Dual Transistors) SOT-363 A E L RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES 2SA1037AK and 2SC2412K are housed independently in a package. Transistor elements independent, eliminating interference. Mounting cost and area can be cut in half. B MARKING AND EQUIVALENT CIRCUIT 6 5 4 3 C 2 B 1 E F DG K C H J Z1 TR2 1 2 3 TR1 REF. A B C D E F 45 EB 6 C Millimeter Min. Max. 2.00 2.20 2.15 2.45 1.15 1.35 0.90 1.10 1.20 1.40 0.15 0.35 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.15 8° 0.650 TYP. TR1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current – Continuous Collector Power Dissipation Junction & Storage Temperature SYMBOL VCBO VCEO VEBO IC PC TJ, TSTG RATINGS 60 50 7 0.15 0.15 150, -55~150 UNIT V V V A W ℃ TR1 NPN ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob MIN. 60 50 7 120 - TYP. 180 2.0 M AX. 0.1 0.1 560 0.4 3.5 UNIT V V V µA µA V MHz pF TEST CONDITIONS IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=60V, IE=0 VEB=7V, IC=0 VCE=6V, IC=1mA IC=50mA, IB=5mA VCE=12V, IC=2mA, f=100MHz VCB=12V, IE=0, f=1MHz TR2 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current – Continuous Collector Power Dissipation Junction & Storage Temperature SYMBOL VCBO VCEO VEBO IC PC TJ, TSTG RATINGS -60 -50 -6 -0.15 0.15 150, -55~150 UNIT V V V A W ℃ TR2 PNP ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob MIN. -60 -50 -6 120 - TYP. 140 - M AX. -0.1 -0.1 560 -0.5 5 UNIT V V V µA µA V MHz pF TEST CONDITIONS IC=-50µA, IE=0 IC=-1mA, IB=0 IE=-50µA, IC=0 VCB=-60V, IE=0 VEB=-6V, IC=0 VCE=-6V, IC=-1mA IC=-50mA, IB=-5mA VCE=-12V, IC=-2mA, f=100MHz VCB=-12V, IE=0, f=1MHz http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 28-Oct-2009 Rev. B Page 1 of 4 UMZ1N Elektronische Bauelemente 0.15 W, ±150 mA, ±60 V Silicon Epitaxial Planar Power Management (Dual Transistors) TYPICAL CHARACTERISTICS TR1 (NPN) http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 28-Oct-2009 Rev. B Page 2 of 4 UMZ1N Elektronische Bauelemente 0.15 W, ±150 mA, ±60 V Silicon Epitaxial Planar Power Management (Dual Transistors) TYPICAL CHARACTERISTICS (cont’d) TR1 (NPN) http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 28-Oct-2009 Rev. B Page 3 of 4 UMZ1N Elektronische Bauelemente 0.15 W, ±150 mA, ±60 V Silicon Epitaxial Planar Power Management (Dual Transistors) TYPICAL CHARACTERISTICS TR2 (PNP) http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 28-Oct-2009 Rev. B Page 4 of 4