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1N4148CSM_09

1N4148CSM_09

  • 厂商:

    SEME-LAB

  • 封装:

  • 描述:

    1N4148CSM_09 - SILICON EPITAXIAL PLANAR DIODE - Seme LAB

  • 详情介绍
  • 数据手册
  • 价格&库存
1N4148CSM_09 数据手册
SILICON EPITAXIAL PLANAR DIODE 1N4148CSM • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Surface Mount Package Suitable for general purpose, switching applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VBR VRWM IO IFSM PD (1) (1) Breakdown Voltage Working Peak Reverse Voltage Average Rectified Output Current, TA = 75°C Surge Current, half sine wave, tp = 8.3ms TA = 75°C Total Power Dissipation at Total Power Dissipation at Junction Temperature Range Storage Temperature Range Derate Above 75°C TSP = 75°C Derate Above 75°C PD TJ Tstg 100V 75V 200mA 2A 385mW 3.08mW/°C 1.042W 8.33mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols RθJA(PCB) RθJSP (1) Parameters Thermal Resistance, Junction To Ambient, On PCB Thermal Resistance, Junction To Solder Pads Min. Typ. Max. 325 120 Units °C/W °C/W Notes Notes (1) PCB = FR4 – 0.0625 Inch (1.59mm), 1 Layer, 1.0-Oz Cu, horizontal, in still air. RθJA with a defined PCB thermal resistance condition included, is measured at IO = 200mA. Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 7789 Issue 2 Page 1 of 4 Website: http://www.semelab-tt.com SILICON EPITAXIAL PLANAR DIODE 1N4148CSM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols VBR Parameters Breakdown Voltage Test Conditions IR = 100µA IF = 10mA Min. 100 Typ Max. Units 0.8 1.2 TA = 150°C TA = -55°C 0.8 1.3 25 500 TA = 150°C 35 75 µA nA V VF (2) Forward Voltage IF = 100mA IF = 10mA IF = 100mA VR = 20V IR Reverse Current VR = 75V VR = 20V VR = 75V DYNAMIC CHARACTERISTICS C Capacitance VR = 0V VR = 1.5V IF = IR = 10mA IREC = 1.0mA f = 1.0MHz RL = 100 4 2.8 5 ns pF trr Reverse Recovery Time Notes Notes (2) Pulse Width ≤ 300us, δ ≤ 2% S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 7789 Issue 2 Page 2 of 4 SILICON EPITAXIAL PLANAR DIODE 1N4148CSM MECHANICAL DATA Dimensions in mm (inches) 0.51 ± 0.10 (0.02 ± 0.004) 1.02 ± 0.10 (0.04 ± 0.004) R0.31 (0.012) 3 2.54 ± 0.13 (0.10 ± 0.005) 2 1 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) 0.76 ± 0.15 (0.03 ± 0.006) 0.31 rad. (0.012) 1.40 (0.055) max. LCC1 (Underside View) Pad 1 - Anode Pad 2 – N/C Pad 3 - Cathode 0.51 ± 0.10 (0.02 ± 0.004) 4 1.02 ± 0.10 (0.04 ± 0.004) R0.31 (0.012) R (0 0. .0 56 22 ) 3 2.54 ± 0.13 (0.10 ± 0.005) 2 1 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) 0.76 ± 0.15 (0.03 ± 0.006) 0.31 rad. (0.012) 1.40 (0.055) max. LCC1-4 (Underside View) Pad 1 - Anode Pad 2 – N/C Pad 3 – Cathode Pad 4 –Lid Contact Ground * Note: requested Note: If required, must be requested at time of order * The additional contact provides a connection to the lid in the application. Connecting the metal lid to a known electrical potential stops deep dielectric discharge in space applications; see the Space Weather link www.semelab.co.uk/mil/lcc1_4 on the Semelab web site. Package variant to be specified at order. Other Package Outlines may be available – Contact Semelab Sales to Enquire S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 7789 Issue 2 Page 3 of 4 SILICON EPITAXIAL PLANAR DIODE 1N4148CSM SCREENING OPTIONS Space Level (JQRS/ESA) and High Reliability options are available in accordance with the High Reliability and Screening Options Handbook available for download from the from the TT electronics Semelab web site. ESA Quality Level Products are based on the testing procedures specified in the generic ESCC 5000 and in the corresponding part detail specifications. Semelabs QR216 and QR217 processing specifications (JQRS), in conjunction with the companies ISO 9001:2000 approval present a viable alternative to the American MILPRF-19500 space level processing. QR217 (Space Level Quality Conformance) is based on the quality conformance inspection requirements of MIL-PRF19500 groups A (table V), B (table VIa), C (table VII) and also ESA / ESCC 5000 (chart F4) lot validation tests. QR216 (Space Level Screening) is based on the screening requirements of MIL-PRF-19500 (table IV) and also ESA /ESCC 5000 (chart F3). JQRS parts are processed to the device data sheet and screened to QR216 with conformance testing to Q217 groups A and B in accordance with MIL-STD-750 methods and procedures. Additional conformance options are available, for example Pre-Cap Visual Inspection, Buy-Off Visit or Data Packs. These are chargeable and must be specified at the order stage (See Ordering Information). Minimum order quantities may apply. Alternative or additional customer specific conformance or screening requirements would be considered. Contact Semelab sales with enquires. ORDERING INFORMATION Part number is built from part and screening level. The part number can be extended to include the additional options as shown below. Type – See Electrical Stability Characteristics Table Package Variant – See Mechanical Data Screening Level – See Screening Options (ESA / JQRS) Additional Options: Customer Pre-Cap Visual Inspection Customer Buy-Off visit Data Pack Solderability Samples Scanning Electron Microscopy Radiography (X-ray) Total Dose Radiation Test MIL-PRF-19500 (QR217) Group B charge Group B destructive mechanical samples Group C charge Group C destructive electrical samples Group C destructive mechanical samples ESA/ESCC Lot Validation Testing (subgroup 1) charge LVT1 destructive samples (environmental) LVT1 destructive samples (mechanical) Lot Validation Testing (subgroup 2) charge LVT2 endurance samples (electrical) Lot Validation Testing (subgroup 3) charge LVT3 destructive samples (mechanical) .CVP .CVB .DA .SS .SEM .XRAY .RAD .GRPB .GBDM (12 pieces) .GRPC .GCDE (12 pieces) .GCDM (6 pieces) .LVT1 .L1DE (15 pieces) .L1DM (15 pieces) .LVT2 .L2D (15 pieces) .LVT3 .L3D (5 pieces) Additional Option Notes: 1) All ‘Additional Options’ are chargeable and must be specified at order stage. 2) When Group B,C or LVT is required, additional electrical and mechanical destructive samples must be ordered 3) All destructive samples are marked the same as other production parts unless otherwise requested. MARKING DETAILS Screened parts are typically marked with specification number, serial number (or week of seal) as shown in the example below. All non screened parts are printed with three characters only eg. 148. Customer specific marking requirements can be arranged at time of order but is approximately limited to two lines of 7 Characters. This is to ensure text remains readable.. Example Marking: Example ordering information: The following example is for the part with, JQRS screening, additional Group C conformance testing and a Data pack. Part Numbers: 1N4148CSM-JQRS (Include quantity for flight parts) 1N4148CSM-JQRS.GRPC (chargeable conformance option) 1N4148CSM-JQRS.GCDE (charge for destructive parts) 1N4148CSM-JQRS.GCDM (charge for destructive parts) 1N4148CSM-JQRS.DA (charge for Data pack) Customers with any specific requirements (e.g. marking, package or screening) may be supplied with a similar alternative part number (there is maximum 20 character limit to part numbers). Requirements for deep dielectric discharge variant (LCC1-4) must be specified at time of order. Contact Semelab sales with all enquiries High Reliability and Screening Options Handbook link: http://www.semelab.co.uk/pdf/misc/documents/hirel_and_screening_options.pdf S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 7789 Issue 2 Page 4 of 4 Website: http://www.semelab-tt.com
1N4148CSM_09
1. 物料型号:1N4148CSM

2. 器件简介: - 1N4148CSM是一种硅平面二极管,具有低漏电流和快速开关特性。 - 采用密封陶瓷表面贴装封装,适用于通用开关应用。 - 可提供筛选选项。

3. 引脚分配: - LCC1(底部视图):Pad 1 - 阳极,Pad 2 - 不适用(N/C),Pad 3 - 阴极。 - LCC1-4(底部视图):Pad 3 - 阴极,Pad 4 - 盖接触接地(如果需要,必须在订购时指定)。

4. 参数特性: - 绝对最大额定值: - 击穿电压(VBR):100V - 工作峰值反向电压(VRWM):75V - 平均整流输出电流(IO),TA = 75°C:200mA - 浪涌电流(IFSM),半正弦波,tp = 8.3ms:2A - 在TA = 75°C时的总功耗(PD):385mW,超过75°C时的降额:3.08mW/°C - 在Tsp = 75°C时的总功耗(PD):1.042W,超过75°C时的降额:8.33mW/°C - 结温范围(TJ):-65至+200°C - 储存温度范围(Tstg):-65至+200°C - 热性能: - 从结到环境的热阻(R JA(PCB)):最大325°C/W - 从结到焊盘的热阻(ROJSP):最大120°C/W

5. 功能详解: - 电气特性(TA = 25°C,除非另有说明): - 击穿电压(VBR):100V - 正向电压(VF2):在IF = 10mA时为0.8V,在IF = 100mA时为1.2V - 反向电流(IR):在VR = 20V时为25nA,在VR = 75V时为500nA - 动态特性: - 电容(C):在VR = 0V时为4pF,在VR = 1.5V时为2.8pF - 反向恢复时间(trr):在IF = IR = 10mA,REC = 1.0mA,RL = 100Ω时为5ns

6. 应用信息: - 适用于通用开关应用。

7. 封装信息: - 提供LCC1和LCC1-4两种封装变体,具体尺寸和视图见文档中的机械数据部分。
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