2N1132

SILICON PLANAR PNP TRANSISTOR 2N1132 • • • High Speed Switching Hermetic TO-39 Metal package. Ideally suited for Small Signal General Purpose and Switching Applications Screening Options Available • ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current TA = 25°C Total Power Dissipation at Derate Above 25°C TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range -50V -40V -5V -600mA 600mW 3.4mW/°C 2W 11.4mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols RθJA RθJC Parameters Thermal Resistance, Junction To Ambient Thermal Resistance, Junction To Case Min. Typ. Max. 292 87.5 Units °C/W °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 8069 Issue 1 Page 1 of 3 Website: http://www.semelab-tt.com SILICON PLANAR PNP TRANSISTOR 2N1132 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols V(BR)CEO (1) Parameters Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector Cut-Off Current Test Conditions IC = -10mA IC = -10µA VCB = -50V IB = 0 IE = 0 IE = 0 IE = 0 TA = 150°C Min. -40 Typ Max. Units V V(BR)CBO -50 -10 -1.0 -100 -100 -10 -1.3 V -1.5 25 30 100 mA µA ICBO VCB = -30V IEBO ICER VCE(sat) VBE(sat) hFE (1) (1) Emitter Cut-Off Current Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Forward-current transfer ratio VEB = -5V VCE = -50V IC = -150mA IC = -150mA IC = -5mA IC = -150mA IC = 0 RBE