2N2060

DUAL MATCHED NPN SILICON TRANSISTOR 2N2060 / 2N2060A • • • • Matched Dual NPN Transistors Low Power Hermetically Sealed TO-77 Metal Package High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCEO VCER VCBO VEBO IC PD Collector – Emitter Voltage Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Continuous Collector Current Total Power Dissipation at TA = 25°C Derate Above 25°C TC = 25°C Derate Above 25°C Junction Temperature Range Storage Temperature Range 60V 80V 100V 7V 500mA P er Per Side Total Device 540 mW 600 mW 3.08 mW/°C 3.48 mW/°C 1.5W 2.12W 8.6 mW/°C 12.1 mW/°C -65 to +200°C -65 to +200°C TJ Tstg Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 8570 Issue 1 Page 1 of 3 Website: http://www.semelab-tt.com DUAL MATCHED NPN SILICON TRANSISTOR 2N2060 / 2N2060A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols ICBO IEBO V(BR)CBO V(BR)EBO V(BR)CER(1) V(BR)CEO(1) VBE(sat) Parameters Collector-Cut-Off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector – Emitter Breakdown Voltage Collector – Emitter Breakdown Voltage Base-Emitter Saturation Voltage Test Conditions VCB = 80V IE = 0 TA = 150°C VBE = 5V IC = 100µA IE = 100µA IC = 100mA IC = 30mA IC = 50mA 2N2060A IC = 50mA 2N2060 IC = 50mA IC = 10µA IC = 100µA IC = 1.0mA IC = 10mA IC = 0 IE = 0 IC = 0 RBE ≤10Ω IB = 0 IB = 5mA IB = 5mA IB = 5mA VCE = 5V VCE = 5V VCE = 5V VCE = 5V Min Typ Max 0.002 10 2.0 Units µA nA 100 7 80 60 V 0.9 0.6 1.2 25 30 40 50 75 90 120 150 - VCE(sat) Collector - Emitter Saturation Voltage HFE Forward-current transfer ratio DYNAMIC CHARACTERISTICS fT Current Gain Bandwidth Product IC = 50mA f = 20MHz Small-Signal Current Gain IC = 1.0mA f = 1.0KHz Input Impedance IC = 1.0mA f = 1.0KHz Input Impedance IC = 1.0mA f = 1.0KHz Output Capacitance VCB = 10V f = 1.0MHz Input Capacitance VBE = 0.5V f = 1.0MHz IC = 0 85 pF IE = 0 15 pF VCB = 10V 20 30 VCE = 5V 1000 4000 Ω VCE = 5V 50 150 VCE = 10V 60 MHz hfe hie(3) hib(3) Cobo Cibo Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% (2) The lowest HFE reading is taken as HFE1 for this ratio (3) Parameter by design only S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8570 Issue 1 Page 2 of 3 DUAL MATCHED NPN SILICON TRANSISTOR 2N2060 / 2N2060A MATCHING CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols HFE1/ HFE2 VBE1- VBE2 Parameters DC Current Gain Ratio Base – Emitter Voltage Differential Base –Emitter Voltage Differential Change Due To Temperature (2) Test Conditions IC = 100µA IC = 1.0mA IC = 100µA IC = 1.0mA IC = 1.0mA VCE = 5V VCE = 5V VCE = 5V VCE = 5V VCE = 5V Min 0.9 0.9 Typ Max 1.0 1.0 3.0 5.0 Units - mV ∆ (VBE1- VBE2 ) ∆T 5.0 TA = -55°C to +125°C µV/°C MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.335) 9.40 (0.370) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 1.02 (0.040) Max. 12.7 (0.500) Min. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200) 2.54 (0.100) 2.54 (0.100) 3 2 4 5 6 0.74 (0.029) 1.14 (0.045) 1 45˚ 0.71 (0.028) 0.86 (0.034) TO-77 (MO-002AF) METAL PACKAGE PIN 1 – Collector PIN 2 – Base PIN 3 – Emitter PIN 4 – Emitter PIN 5 – Base PIN 6 – Collector S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8570 Issue 1 Page 3 of 3