2N2222AC3C

SILICON SWITCHING NPN TRANSISTOR 2N2222AC3A, 2N2222AC3B 2N2222AC3C • • • • High Speed Saturated Switching Hermetic LCC3 Ceramic package. Variant B to MIL-PRF-19500/255 outline Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current TA = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 75V 50V 6V 0.8A 500mW 2.86mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols RθJA(1) RθJSP(IS) (1) (2) Parameters Thermal Resistance, Junction To Ambient Max. 325 110 Units °C/W °C/W (2) Thermal Resistance Junction to Solder Pads For non-thermal conductive PCB or unknown PCB surface mount conditions in free air. Infinite sink mount to PCB. Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 9192 Issue 1 Page 1 of 3 Website: http://www.semelab-tt.com SILICON SWITCHING NPN TRANSISTOR 2N2222AC3A 2N2222AC3B 2N2222AC3C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols V(BR)CEO ICES (1) Parameters Collector-Emitter Sustaining Voltage Collector-Emitter Cut-Off Current Collector-Base Cut-Off Current Test Conditions IC = 10mA VCE = 50V IE = 0 VCB = 75V VCB = 60V TA = 150°C IB = 0 Min. 50 Typ. Max. Units V 50 10 10 10 10 10 nA µA nA µA nA µA ICBO IE = 0 IEBO Emitter Cut-Off Current IC = 0 VEB = 4V VEB = 6V ON CHARACTERISTICS VCE(Sat) (1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = 150mA IC = 500mA IC = 150mA IC = 500mA IC = 0.1mA IC = 1.0mA IB = 15mA IB = 50mA IB = 15mA IB = 50mA VCE = 10V VCE = 10V VCE = 10V TA = -55°C (1) 0.3 1.0 0.6 1.2 2.0 50 75 100 35 100 30 300 325 V VBE(Sat) (1) V hFE DC Current Gain IC = 10mA - IC = 150mA IC = 500mA VCE = 10V VCE = 10V (1) SMALL SIGNAL CHARACTERISTICS Cobo Cibo |hfe| hfe Output Capacitance Input Capacitance Magnitude of smallsignal, short-circuit forward current transfer ratio Small Signal Current Gain VCB = 10V VEB = 0.5V IC = 20mA IC = 1.0mA IE = 0 IC = 0 VCE = 20V VCE = 10V f = 1.0MHz f = 1.0MHz f = 100MHz 2.5 8 25 pF f = 1.0kHz 50 - Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 9192 Issue 1 Page 2 of 3 SILICON SWITCHING NPN TRANSISTOR 2N2222AC3A 2N2222AC3B 2N2222AC3C SWITCHING CHARACTERISTICS Symbols ton toff Parameters Saturated Turn-on Time Saturated Turn-off Time Test Conditions VCC = 30V IC = 150mA IB1 = 15mA Min. Typ. Max. 35 300 Units ns MECHANICAL DATA Dimensions in mm (inches) 5.59 ± 0.13 (0.22 ± 0.005) 0.25 ± 0.03 (0.01 ± 0.001) 1.40 ± 0.15 (0.055 ± 0.006) 0.64 ± 0.08 (0.025 ± 0.003) 0.23 rad. (0.009) 3 2 1.27 ± 0.05 (0.05 ± 0.002) 3.81 ± 0.13 (0.15 ± 0.005) 4 1 0.23 min. (0.009) 1.02 ± 0.20 (0.04 ± 0.008) 2.03 ± 0.20 (0.08 ± 0.008) LCC3 (MO-041BA) Underside Underside View Package Variant Table V ariant Variant A B C Pad 1 Collector Collector Collector Pad 2 N/C N/C Emitter Pad 3 Emitter Base N/C Pad 4 Base Emitter Base N/C = No Connection S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 9192 Issue 1 Page 3 of 3