2N2222ADCSM

2N2222ADCSM MECHANICAL DATA Dimensions in mm (inches) DUAL HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS FEATURES 1.40 ± 0.15 (0.055 ± 0.006) 0.64 ± 0.06 (0.025 ± 0.003) 2.29 ± 0.20 (0.09 ± 0.008) 1.65 ± 0.13 (0.065 ± 0.005) • DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTORS 4.32 ± 0.13 (0.170 ± 0.005) 2.54 ± 0.13 (0.10 ± 0.005) 2 1 A 3 4 5 • HERMETIC CERAMIC SURFACE MOUNT PACKAGE • CECC SCREENING OPTIONS • SPACE QUALITY LEVELS OPTIONS • HIGH SPEED SATURATED SWITCHING 6 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) 6.22 ± 0.13 (0.245 ± 0.005) LCC2 PACKAGE Underside View PAD 1 – Collector 1 PAD 2 – Base 1 PAD 3 – Base 2 PAD 4 – Collector 2 PAD 5 – Emitter 2 PAD 6 – Emitter 1 APPLICATIONS: Hermetically sealed dual surface mount version of the popular 2N2222A for high reliability / space applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS PER SIDE (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD RθJA RθJC TSTG,Tj Semelab plc. PER SIDE Collector – Base Voltage Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IB = 0) Collector Current Total Device Dissipation Derate above 50°C TOTAL DEVICE Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case Storage Temperature,Operating Temp Range Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 75V 40V 6V 600mA 350mW 2.0mW / °C 130°C/W 60°C/W –55 to 200°C DOC 7168 Issue 1 2N2222ADCSM ELECTRICAL CHARACTERISTICS PER SIDE (TC = 25°C unless otherwise stated) Parameter VCEO(sus)* V(BR)CBO* V(BR)EBO* ICEX* ICBO* IEBO* IBL* VCE(sat)* VBE(sat)* Collector – Emitter Sustaining Voltage Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector Cut-off Current (IC = 0) Collector – Base Cut-off Current Emitter Cut-off Current (IC = 0) Base Current Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage Test Conditions IC = 10mA IC = 10μA IE = 10μA IB = 0 IE = 0 TC = 125°C IC = 0 VCE = 60V IC = 150mA IC = 500mA IC = 150mA IC = 500mA IC = 0.1mA IC = 1mA VEB = 3V (off) VEB = 3V (off) IB = 15mA IB = 50mA IB = 15mA IC = 50mA VCE = 10V VCE = 10V VCE = 10V VCE = 10V VCE = 10V VCE = 1V VCE = 10V IC = 0 VCE = 60V VCB = 60V Min. 40 75 6 Typ. Max. Unit V V V 10 10 10 10 20 0.3 1 nA nA μA nA nA V V 0.6 35 50 75 35 100 50 40 1.2 2 hFE* DC Current Gain IC = 10mA TA = –55°C IC = 10mA IC = 150mA IC = 150mA IC = 500mA — 300 * Pulse test tp = 300μs , δ ≤ 2% DYNAMIC CHARACTERISTICS PER SIDE (TC = 25°C unless otherwise stated) Parameter fT Cob Cib hfe Transition Frequency Output Capacitance Input Capacitance Small Signal Current Gain Test Conditions IC = 20mA VCB = 10V VBE = 0.5V IC = 1mA IC = 10mA VCE = 20V IE = 0 IC = 0 VCE = 10V VCE = 10V f = 100MHz f = 1.0MHz f = 1.0MHz f = 1kHz f = 1kHz Min. 300 Typ. Max. Unit MHz 8 30 pF pF 50 75 300 375 SWITCHING CHARACTERISTICS PER SIDE (RESISTIVE LOAD) (TC = 25°C unless otherwise stated) Parameter td tr ts tf Delay Time Rise Time Storage Time Fall Time Test Conditions VCC = 30V IC1 = 150mA VCC = 30V VBE = 0.5V (off) IB1 = 15mA IC = 150mA IB1 = IB2 = 15mA Min. Typ. Max. Unit 10 25 225 60 ns ns ns ns fT is defined as the frequency at which hFE extrapolates to unity. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk DOC 7168 Issue 1