2N2222AQCSM

QUAD SILICON PLANAR EPITAXIAL NPN TRANSISTORS 2N2222AQCSM • • • High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available • ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current TA = 25°C Total Power Dissipation at Derate Above 37.5°C Junction Temperature Range Storage Temperature Range Per Device Total Package 75V 50V 6V 800mA 500mW 2W 3.08mW/°C 12.3mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES (Each Device) Symbols RθJA Parameters Thermal Resistance, Junction To Ambient Min. Typ. Max. 325 Units °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 8348 Issue 2 Page 1 of 3 Website: http://www.semelab-tt.com QUAD SILICON PLANAR EPITAXIAL NPN TRANSISTORS 2N2222AQCSM ELECTRICAL CHARACTERISTICS (Each Device, TA = 25°C unless otherwise stated) Symbols V(BR)CEO ICBO Collector Cut-Off Current (1) Parameters Collector-Emitter Breakdown Voltage Test Conditions IC = 10mA VCB = 75V VCB = 60V IB = 0 IE = 0 IE = 0 TA = 150°C Min. 50 Typ Max. Units V 10 10 10 10 10 50 µA nA µA µA nA nA IEBO ICES VCE(sat) (1) Emitter Cut-Off Current Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VEB = 6V VEB = 4V VCE = 50V IC = 150mA IC = 500mA IC = 150mA IC = 500mA IC = 0.1mA IC = 1.0mA IC = 0 IC = 0 IB = 15mA IB = 50mA IB = 15mA IB = 50mA VCE = 10V VCE = 10V VCE = 10V TA = -55°C 50 75 100 35 100 30 0.6 0.3 1.0 1.2 2 V VBE(sat) (1) 325 hFE (1) Forward-current transfer ratio IC = 10mA IC = 150mA IC = 500mA VCE = 10V VCE = 10V 300 DYNAMIC CHARACTERISTICS | hfe | Small signal forward-current transfer ratio Small Signal Current Gain IC = 20mA f = 100MHz IC = 1.0mA f = 1.0KHz VCB = 10V f = 1.0MHz VEB = 0.5V f = 1.0MHz IC = 150mA IB1 = 15mA IC = 150mA VCC = 30V IB1 = - IB2 = 15mA VCC = 30V IC = 0 IE = 0 VCE = 10V 50 VCE = 20V 2.5 hfe Cobo Cibo ton toff Output Capacitance 8 pF 30 Input Capacitance Turn-On Time 35 ns 300 Turn-Off Time Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8348 Issue 2 Page 2 of 3 QUAD SILICON PLANAR EPITAXIAL NPN TRANSISTORS 2N2222AQCSM MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.350) 1.27 (0.050) typ. 0.30 (0.012) Rad. 4 plcs 1.14 – 0.15 (0.045 – 0.006) 0.65 (0.025) typ. 12 11 10 9 8 7 13 14 15 16 17 18 1 2 7.24 (0.285) 0.23 (0.009) Rad. 18 plcs 3 6 5 4 1.14(0.045) typ 2.54 (0.100) 1.40 (0.055) Nom. LCC6 (MO-042AA) Underside View Pad 1 – Base 1 Pad 2 – Emitter 1 Pad 3 – Collector 1 Pad 7 – Collector 2 Pad 8 – Emitter 2 Pad 9 – Base 2 Pad 10 – Base 3 Pad 11 – Emitter 3 Pad 12 – Collector 3 Pad 16 – Collector 4 Pad 17 – Emitter 4 Pad 18 – Base 4 Pads 4, 5, 6, 13, 14, 15 – No Connections S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8348 Issue 2 Page 3 of 3