2N2894AC1

HIGH SPEED PNP SILICON BIPOLAR TRANSISTOR 2N2894AC1 • • • • Hermetic Ceramic Surface Mount Package (SOT23 Compatible) Silicon Planar Epitaxial PNP Transistor High Speed low Saturation Switching Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current TA = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range -12V -12V -4.5V -200mA 360mW 2.88mW/°C -65 to +150°C -65 to +150°C THERMAL PROPERTIES Symbol RθJA Parameter Thermal Resistance Junction to Ambient Max 347 Units °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing an order. S emelab Semelab Limited Telephone +44 (0) 1455 556565 Email: sales@semelab-tt.com Coventry Road, Lutterworth, Leicestershire, LE17 4JB Fax +44 (0) 1455 552612 Website: http://www.semelab-tt.com Document Number 8519 Issue 1 Page 1 of 4 HIGH SPEED PNP SILICON BIPOLAR TRANSISTOR 2N2894AC1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols V(BR)CBO V(BR)CEO V(BR)EBO ICBO (1) (1) Parameters Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Test Conditions IC = -10µA IC = -10mA IE = -100µA VCB = -10V IE = 0 IB = 0 IC = 0 IE = 0 TA = 125°C IC = -10mA VCE = -0.3V VCE = -0.5V TA = -55°C IC = -100mA IC = -10mA VCE = -1.0V IB = -1.0mA IB = -3.0mA IB = -10mA IB = -1.0mA IB = -3.0mA IB = -10mA Min -12 -12 -4.5 Typ Max Units V (1) -100 -10 30 40 20 30 -0.15 -0.19 -0.45 -0.98 -1.15 -1.50 120 nA µA hFE (1) Forward-current transfer ratio IC = -30mA VCE(sat) (1) Collector-Emitter Saturation Voltage IC = -30mA IC = -100mA IC = -10mA V VBE(sat) (1) Base-Emitter Saturation Voltage IC = -30mA IC = -100mA V DYNAMIC CHARACTERISTICS fT COBO CIBO ton toff Current Gain-Bandwidth Product Output Capacitance Input Capacitance Turn-On Time Turn-Off Time IC = -30mA f = 100MHz VCB = -5V, IE = 0, 1.0MHz VEB = -0.5V, IC = 0, 1.0MHz VCC = -2V IB1 = 1.5mA IC = -30mA IB2 = -1.5mA 4.5 6.0 60 60 ns pF VCE = -10V 650 MHz Notes Notes (1) Pulse Width < 300µs, Duty Cycle