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2N2894ADCSM

2N2894ADCSM

  • 厂商:

    SEME-LAB

  • 封装:

  • 描述:

    2N2894ADCSM - DUAL HIGH SPEED, MEDIUM POWER - Seme LAB

  • 详情介绍
  • 数据手册
  • 价格&库存
2N2894ADCSM 数据手册
2N2894ADCSM MECHANICAL DATA Dimensions in mm (inches) DUAL HIGH SPEED, MEDIUM POWER PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FEATURES 2.29 ± 0.20 (0.09 ± 0.008) 1.65 ± 0.13 (0.065 ± 0.005) 0.64 ± 0.08 (0.025 ± 0.003) 1.40 ± 0.15 (0.055 ± 0.006) • SILICON PLANAR EPITAXIAL DUAL PNP TRANSISTOR 4.32 ± 0.13 (0.170 ± 0.005) 2.54 ± 0.13 (0.10 ± 0.005) 2 1 3 4 5 • HERMETIC CERAMIC SURFACE MOUNT PACKAGE • CECC SCREENING OPTIONS AVAILABLE • SPACE QUALITY LEVELS OPTIONS • HIGH SPEED SATURATED SWITCHING A 6 0.23 rad. (0.009) 1.27 ± 0.13 (0.05 ± 0.005) 6.22 ± 0.13 (0.245 ± 0.005) A= LCC2 PACKAGE Underside View APPLICATIONS: For high reliablitity general purpose applications requiring small size and low weight devices. PAD 1 - Collector 1 PAD 2 - Base 1 PAD 3 - Base 2 PAD 4 - Collector 2 PAD 5 - Emitter 2 PAD 6 - Emitter 1 ABSOLUTE MAXIMUM RATINGS(Tcase = 25°C unless otherwise stated) PER SIDE VCBO VCEO VEBO IC PD PD Rja Tj Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Device Dissipation Derate above 50°C Thermal Resistance Junction to Ambient Max Junction Temperature Storage Temperature TOTAL –12V –12V –4.5V –200mA 300mW 500mW 2mW / °C 3.3mW / °C 420°C / W 250°C / W 200°C –65 to 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 6621 Issue 1 2N2894ADCSM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter V(BR)CBO* V(BR)CEO V(BR)EBO ICBO ICES VCE(sat) Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Collector – Emitter Saturation Voltage Test Conditions IC = 10μA IE = 100μA VCB = –10V VBE = 0 IC = –10mA IC = –30mA IC = –100mA IC = –10mA IE = 0 IB = 0 IC = 0 Tamb = 125°C VCE = –10V IB = –1.0mA IB = –3mA IB = –10mA IB = –1.0mA IB = –3mA IB = –10mA VCE = –0.3V VCE = –0.5V VCE = –1.0V VCE = –0.5V Tamb = -55°C f = 100MHz IC = 0 IE = 0 VCE = –2V VCE = –2V Min. – 12 – 12 – 4.5 Typ. Max. Unit V – 10 – 50 –0.130 –0.190 – 0.450 V μA nA Collector – Emitter Breakdown Voltage IC = 10mA –0.78 –0.85 30 40 30 20 800 –0.920 –1.15 –1.5 150 –— V VBE(sat) Base – Emitter On Voltage IC = –30mA IC = –100mA IC = –10mA IC = –30mA hFE DC Current Gain IC = –100mA IC = –30mA VCE = –10V IC = –30mA VEB = –5V f = 140kHz VCB = –5V f = 140kHz IC = –30mA IB2 = –1.5mA IC = –30mA fT Cebo Ccbo ton toff Current Gain Bandwidth Product Emitter – Base – Capacitance Collector – Base – Capacitance Turn on Time MHz 6 4.5 60 35 pF pF ns ns Turn off Time IB1 = IB2= –1.5mA * Pulse Test: tp ≤ 300μs, δ ≤ 2%. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 6621 Issue 1
2N2894ADCSM
1. 物料型号:2N2894ADCSM

2. 器件简介:2N2894ADCSM是一款双高速、中功率的PNP通用晶体管,采用密封陶瓷表面贴装封装。

3. 引脚分配: - PAD 1 - Collector 1 - PAD 2 - Base 1 - PAD 3 - Base 2 - PAD 4 - Collector 2 - PAD 5 - Emitter 2 - PAD 6 - Emitter 1

4. 参数特性: - 绝对最大额定值(TCase = 25°C,除非另有说明): - VCBO:Collector - Base Voltage,-12V - VCEO:Collector - Emitter Voltage,-12V - VEBO:Emitter - Base Voltage,-4.5V - Ic:Collector Current,-200mA - PD:Device Dissipation,300mW(单侧),500mW(总) - Tj:Max Junction Temperature,200°C - 电特性(TA = 25°C,除非另有说明): - V(BR)CBO:Collector - Base Breakdown Voltage,12V - V(BR)CEO:Collector - Emitter Breakdown Voltage,-12V - V(BR)EBO:Emitter - Base Breakdown Voltage,-4.5V - hFE:DC Current Gain,30至150 - fT:Current Gain Bandwidth Product,800MHz

5. 功能详解:该器件具有硅平面外延双PNP晶体管、密封陶瓷表面贴装封装、CECC屏蔽选项、空间质量等级选项和高速饱和开关特性。

6. 应用信息:适用于需要小尺寸和低重量设备的高可靠性通用应用。

7. 封装信息:LCC2封装,提供了底部视图的尺寸信息。
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