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2N2894_03

2N2894_03

  • 厂商:

    SEME-LAB

  • 封装:

  • 描述:

    2N2894_03 - PNP SILICON TRANSISTOR - Seme LAB

  • 数据手册
  • 价格&库存
2N2894_03 数据手册
2N2894 MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) PNP SILICON TRANSISTOR FEATURES • SILICON PNP TRANSISTOR • HIGH SPEED, LOW SATURATION SWITCH 5.33 (0.210) 4.32 (0.170) 0.48 (0.019) 0.41 (0.016) dia. 12.7 (0.500) min. APPLICATIONS: GENERAL PURPOSE SWITCHING APPLICATIONS 2.54 (0.100) Nom. 3 2 1 TO18 Underside View PIN 2 – BASE PIN1 – EMITER PIN 3 – COLLECTOR ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD TSTG , TJ Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Total Device Dissipation Total Device Dissipation @ TA =25°C Derate above 25°C @ TC =25°C Derate above 25°C Operating and Storage Temperature Range -12V -12V -4V 200mA 360mW 2.06mW / °C 1.2W 6.85mW / °C –65 to +200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 4081 Issue 1 2N2894 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter BVCEO(SUS) Collector – Base BreakdownVoltage BVCES BVCBO BVEBO ICBO ICES IB VCE(sat) Collector – Base Breakdown Voltage Emitter Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Base Current Collector – Emitter Saturation Voltage Test Conditions IC = -10mA IC = -10µA IE = 100µA VCB = -6V VCE = -6V VCE = -6V IC = -10mA IC = -30mA IC = -100mA IC = -10mA IB = 0 VBE = 0 IE = 0 IC = 0 Tamb = 125°C VBE = 0 VBE = 0 IB = -1mA IB = -3mA IB = -10mA IB = -1mA IB = -3mA IB = -10mA VCE = -0.3V VCE = -0.5V VCE = -0.5V Tamb = -55°C IC = –30mA VCE = –0.5V f = 100MHz IE = 0 IC = 0 VCE = -10V IC = -30mA VCB = -5V f = 140KHz VBE = -0.5V f = 140KHz VCC = -2V IC = -30mA Min. -12 -12 -12 -4 Typ. Max. Unit Collector – Emitter Breakdown Voltage IC = -10µA V -10 -80 -80 -0.15 -0.2 -0.5 V µA nA -0.78 -0.85 30 40 17 25 400 -0.98 -1.2 -1.7 150 — V VBE(sat) Base – Emitter On Voltage IC = -30mA IC = -100mA IC = -10mA IC = -30mA hFE DC Current Gain IC = -30mA fT Cob Cib ton toff Current Gain Bandwidth Product Output Capacitance Input Capacitance Turn on Time MHz 6 pF 6 60 ns 90 Turn off Time IB1 = – IB2=1.5mA * Pulse Test: tp ≤ 300µs, δ ≤ 1%. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 4081 Issue 1
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