2N2896

2N2896 MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) NPN SILICON TRANSISTOR 5.33 (0.210) 4.32 (0.170) 0.48 (0.019) 0.41 (0.016) dia. 12.7 (0.500) min. FEATURES • NPN High Voltage Planar Transistor • Hermetic TO18 Package 2.54 (0.100) Nom. 3 2 1 • Full Screening Options Available TO–18 METAL PACKAGE Underside View PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VCER VEBO IC PD PD Tstg RθJA RθJC Collector – Base Voltage Collector – Emitter Voltage (IB = 0) Collector - Emitter Voltage Emitter – Base Voltage (IB = 0) Collector Current Total Device Dissipation TA = 25 °C Derate above 25°C Total Device Dissipation TC = 25 °C Derate above 25°C Storage Temperature Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case 140V 90V 140V 7V 1A 0.5W 2.86mW / °C 1.8W 10.3mW / °C –65 to 200°C 350°C/W 97°C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5976 Issue 1 2N2896 ELECTRICAL CHARACTERISTICS Continued (TA = 25°C unless otherwise stated) Parameter Test Conditions IC = 100mA ,RBE = 10Ω Min. Typ. Max. Unit. V(BR)CER Collector - Emitter Breakdown Voltage (1) 140 V VCEO(sus) Collector - Emitter Sustaining Voltage (1) IC = 100mA , IB = 0 90 V V(BR)CBO Collector - Base Breakdown Voltage V(BR)EBO Emitter - Base Breakdown Voltage ICBO Colllector Cut Off Current IC = 0.1mA , IE = 0 140 V IE = 0.1mA , IC = 0 VCB = 60V , IE = 0 VCB = 90V , IE = 0 VCB = 90V , IE = 0 TA =150 °C VEB = 5V , IC = 0 IC =1mA, VCE = 10V IC =10mA, VCE = 10V TA = -55 °C IC =150mA, VCE = 10V IC =150mA , IB = 15mA 7 0.01 0.01 10 0.01 35 20 60 V µA IEBO Emitter Cut Off Current µA hFE DC Current 200 0.6 V VCE(sat) Collector - Emitter Saturation Voltage (1) VBE(sat) Base - Emitter Saturation Voltage (1) IC =150mA , IB = 15A 1.2 V fT Current Gain - Bandwith Product IC =50mA ,VCE =10V, f=100 MHZ 120 MHZ Cobo Output Capacitance VCB =10V , IE = 0 , f=1 MHZ 15 pF Cibo Input Capacitance VEB =0.5V , IC = 0 , f=1 MHZ 80 pF hFE Small-Signal Current Gain IC =5mA, VCE = 5V, f=1 KHZ 50 275 1) Pulse test : Pulse Width < 300µs ,Duty Cycle < 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5976 Issue 1