2N2906ACSM

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2906ACSM • • • Low Power Hermetic Ceramic Surface Mount Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available • ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current TA = 25°C Total Power Dissipation at Derate Above 25°C TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range -60V -60V -5V -600mA 400mW 2.28mW/°C 1.8W 10.3mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols RθJA RθJC Parameters Thermal Resistance, Junction To Ambient Thermal Resistance, Junction To Case Min. Typ. Max. 437.5 97.2 Units °C/W °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 8079 Issue 1 Page 1 of 3 Website: http://www.semelab-tt.com SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2906ACSM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols V(BR)CEO(1) V(BR)CBO V(BR)EBO ICEX ICBO (1) Parameters Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Test Conditions IC = -10mA IC = -10µA IE = -10µA VCE = -30V VCB = -50V IB = 0 IE = 0 IC = 0 VBE = -0.5V IE = 0 TA = 150°C IC = -150mA IC = -500mA IC = -150mA IC = -500mA IC = -0.1mA IC = -1.0mA IB = -15mA IB = -50mA IB = -15mA IB = -50mA VCE = -10V VCE = -10V VCE = -10V VCE = -10V VCE = -10V Min. -60 -60 -5 Typ Max. Units V -50 -0.01 -10 -0.4 -1.6 -1.3 -2.6 40 40 40 40 40 120 nA µA VCE(sat) V VBE(sat) (1) hFE (1) Forward-current transfer ratio IC = -10mA IC = -150mA IC = -500mA DYNAMIC CHARACTERISTICS fT Transition Frequency IC = -50mA f = 100MHz Output Capacitance VCB = -10V f = 1.0MHz VEB = -2V f = 1.0MHz IC = -150mA IB1 = -15mA IC = -150mA VCC = -30V VCC = -30V IC = 0 IE = 0 8 pF 30 VCE = -20V 170 MHz Cobo Cibo Input Capacitance ton Turn-On Time 45 ns 300 toff Turn-Off Time IB1 = - IB2 = -15mA Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8079 Issue 1 Page 2 of 3 SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2906ACSM MECHANICAL DATA Dimensions in mm (inches) 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) 2.54 ± 0.13 (0.10 ± 0.005) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) A= 0.76 ± 0.15 (0.03 ± 0.006) 0.31 rad. (0.012) A 1.40 (0.055) max. 1.02 ± 0.10 (0.04 ± 0.004) LCC1 Underside View Pad 1 - Base Pad 2 - Emitter Pad 3 - Collector S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8079 Issue 1 Page 3 of 3