2N2907ADCSM_08

SEME 2N2907ADCSM LAB MECHANICAL DATA Dimensions in mm (inches) DUAL HIGH SPEED, MEDIUM POWER PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS FEATURES 1.40 ± 0.15 (0.055 ± 0.006) 0.64 ± 0.06 (0.025 ± 0.003) 2.29 ± 0.20 (0.09 ± 0.008) 1.65 ± 0.13 (0.065 ± 0.005) • DUAL SILICON PLANAR EPITAXIAL PNP TRANSISTORS 4.32 ± 0.13 (0.170 ± 0.005) 2.54 ± 0.13 (0.10 ± 0.005) 2 1 A 3 4 5 • HERMETIC CERAMIC SURFACE MOUNT PACKAGE • CECC SCREENING OPTIONS • SPACE QUALITY LEVELS OPTIONS • HIGH SPEED SATURATED SWITCHING 6 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) 6.22 ± 0.13 (0.245 ± 0.005) LCC2 PACKAGE Underside View PAD 1 – Collector 1 PAD 2 – Base 1 PAD 3 – Base 2 PAD 4 – Collector 2 PAD 5 – Emitter 2 PAD 6 – Emitter 1 APPLICATIONS: Hermetically sealed dual surface mount version of the popular 2N2907A for high reliability / space applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD RθJA RθJC TSTG,Tj PER SIDE Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current TOTAL DEVICE Total Device Dissipation Derate above 50°C Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case Storage Temperature, Operating temp range –60V –60V –5V -600mA 350mW 2.0mW / °C 130°C / W 60°C / W –55 to 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 7581 Issue 1 SEME 2N2907ADCSM LAB ELECTRICAL CHARACTERISTICS PER SIDE (TC = 25°C unless otherwise stated) Parameter VCEO(BR)* VCBO(BR)* V(BR)EBO* ICEX* ICBO* IBEO VCE(sat)* VBE(sat)* Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector Cut-off Current Collector – Base Cut-off Current Base Cut-off Current Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage Test Conditions IC = -10µA IE = -10µA VCE = -30V IE = 0 TC = 125°C VCE = -30V IC = -150mA IC = -500mA IC = -150mA IC = -500mA IC =- 0.1mA IC = -1.0mA VBE = -0.5V IB = -15mA IB = -50mA IB = -15mA IB = -50mA VCE = -10V VCE = -10V VCE = -10V VCE = -10V VCE = -10V IC = 0 VBE = -0.5V VCB = -50V Min. –60 –60 –5 Typ. Max. Unit V V V -50 -0.01 -10 -50 –0.4 –1.6 –1.3 –2.6 nA µA nA V V Collector – Emitter Breakdown Voltage IC = -10mA 75 100 100 100 50 300 — hFE* DC Current Gain IC = -10mA IC = -150mA IC = -500mA * Pulse test tp = 300µs , δ ≤ 2% DYNAMIC CHARACTERISTICS PER SIDE (TC = 25°C unless otherwise stated) Parameter fT Cob Cib Transition Frequency Output Capacitance Input Capacitance Test Conditions IC = -50mA VCB = -10V VBE = -2V VCE = -20V f = 100MHz IE = 0 IC = 0 f = 1.0MHz f = 1.0MHz Min. 200 Typ. Max. Unit MHz 8 30 pF pF SWITCHING CHARACTERISTICS PER SIDE (RESISTIVE LOAD) (TC = 25°C unless otherwise stated) Parameter ton toff Turn-on Time Turn-off Time Test Conditions VCC = -30V IC = -150mA IB1 = -15mA Min. Typ. Max. Unit 45 300 ns ns Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 7581 Issue 1