LAB
MECHANICAL DATA Dimensions in mm (inches)
SEME
2N3019CSM
HIGH FREQUENCY, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
FEATURES
0.51 ± 0.10 (0.02 ± 0.004)
0.31 rad. (0.012)
• SILICON PLANAR EPITAXIAL NPN TRANSISTOR • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) • CECC SCREENING OPTIONS AVAILABLE
A 1.40 (0.055) max.
2.54 ± 0.13 (0.10 ± 0.005)
3
2
1
1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005)
0.76 ± 0.15 (0.03 ± 0.006)
0.31 rad. (0.012)
• SPACE QUALITY LEVELS AVAILABLE • HIGH SPEED SATURATED SWITCHING
A = 1.02 ± 0.10 (0.04 ± 0.004)
SOT23 CERAMIC (LCC1 PACKAGE)
Underside View PAD 2 – Emitter PAD 3 – Collector
APPLICATIONS:
For high reliablitity general purpose applications requiring small size and low weight devices.
PAD 1 – Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO VCEO VEBO IC PD PD Rja Tj Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Total Device Dissipation Derate above 50°C Thermal Resistance Junction to Ambient Max Junction Temperature Storage Temperature 140V 80V 7V 1A 350mW 2.00mW / °C 350°C / W 200°C –55 to 200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 5468 Issue 1
LAB
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
V(BR)CEO* V(BR)CBO* V(BR)EBO* ICBO IEBO VCE(sat)* VBE(sat)* Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage
SEME
2N3019CSM
Test Conditions
IB = 0 IE = 0 IC = 0 VBE = 0 Tamb = 150°C VEB = 5V IC = 150mA IC = 500mA IC = 150mA IC = 0.1mA IC = 10mA IC = 150mA IB = 15mA IB = 50mA IB = 15mA VCE = 10V VCE = 10V VCE = 10V Tamb = –55°C IC = 500mA IC = 1A VCE = 10V VCE = 10V IC = 100µA IE = 100µA VCB = 90V
Min.
80 140 7
Typ.
Max. Unit
V V V 10 10 10 0.20 0.50 1.1 V nA µA nA
Collector – Emitter BreakdownVoltage IC = 10mA
50 90 100 40 50 15 300 —
hFE*
DC Current Gain
t* Pulse test tp = 300µs , δ ≤ 2%
DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
fT CEBO CCBO hfe NF Transition Frequency Capacitance Input Capacitance Small Signal Current Gain Noise Figure
Test Conditions
IC = 50mA VEB = 0.5V VCB = 10V IC = 1mA IC = 100µA VCE = 10V IC = 0 IE = 0 VCE = 5V VCE = 10V Rg = 1KΩ f = 20MHz f = 1.0MHz f = 1.0MHz f = 1kHz f = 1kHz
Min.
100
Typ.
Max. Unit
MHz 60 12 pF pF — dB
80
400 4
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 5468 Issue 1
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