2N3114CSM

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3114CSM • • • High Voltage Hermetic Ceramic Surface Mount Package Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing Applications Screening Options Available • ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current TA = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 150V 150V 5V 150mA 350mW 2mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols RθJA Parameters Thermal Resistance, Junction To Ambient Min. Typ. Max. 500 Units °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 5293 Issue 2 Page 1 of 3 Website: http://www.semelab-tt.com SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3114CSM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols ICEO Parameters Collector-Cut-Off Current Test Conditions VCE = 150V VCB = 150V IB = 0 IE = 0 IE = 0 TA = 150°C Min. Typ Max. 100 10 10 10 1.0 100 Units µA µA nA µA µA nA ICBO Collector-Cut-Off Current VCB = 100V IEBO Emitter-Cut-Off Current VEB = 5V VEB = 4V IC = 0.1mA IC = 0 IC = 0 VCE = 10V VCE = 10V TA = 150°C 15 30 12 35 60 24 hFE (1) Forward-current transfer ratio (1) IC = 30mA 120 VCE(sat) VBE(sat) (1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = 50mA IC = 50mA IB = 5mA IB = 5mA 1.0 V 0.9 DYNAMIC CHARACTERISTICS | hfe | Small signal forward-current transfer ratio Output Capacitance IC = 30mA f = 20MHz VCB = 20V f = 1.0MHz VEB = 0.5V f = 1.0MHz IC = 0 IE = 0 9 pF VCE = 10V 2 Cobo Cibo Input Capacitance 80 pF Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 5293 Issue 2 Page 2 of 3 SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3114CSM MECHANICAL DATA Dimensions in mm (inches) 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) 2.54 ± 0.13 (0.10 ± 0.005) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) A= 0.76 ± 0.15 (0.03 ± 0.006) 0.31 rad. (0.012) A 1.40 (0.055) max. 1.02 ± 0.10 (0.04 ± 0.004) LCC1 Underside View Pad 1 - Base Pad 2 - Emitter Pad 3 - Collector S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 5293 Issue 2 Page 3 of 3