2N3439

2N3439 2N3440 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) HIGH VOLTAGE NPN TRANSISTORS FEATURES • DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTOR 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. • HIGH VOLTAGE 5.08 (0.200) typ. APPLICATIONS: 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators. 45° TO39 PACKAGE (TO-205AD) Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector ABSOLUTE MAXIMUM RATINGS(Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB Ptot Tstg Tj Collector – Base Voltage (IE = 0) Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Collector Current Base Current Total Power Dissipation at Tcase ≤ 25°C Tamb ≤ 50°C Storage Temperature Junction Temperature 2N3439 450V 350V 2N3440 300V 250V 7V 1A 0.5A 5W 1W –65 to 200°C 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3066 Issue: 1 2N3439 2N3440 ELECTRICAL CHARACTERISTICS Parameter VCEO(sus)* ICEO ICEX ICBO IEBO VCE(sat)* VBE(sat)* Collector – Emitter Sustaining Voltage (IB = 0) Collector Cut-off Current (IB = 0) Collector Cut-off Current (VBE = -1.5V) Collector – Base Cut-off Current (IE = 0) Emitter Cut-off Current (IC = 0) Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage (Tcase = 25°C unless otherwise stated) Test Conditions IC = 50mA IC = 50mA VCE = 300V VCE = 200V VCE = 450V VCE = 300V VCB = 350V VCB = 250V VEB = 6V IC = 50mA IC = 50mA IC = 20mA VCE = 10V IC = 2mA VCE = 10V 2N3439 only IB = 4mA IB = 4mA 2N3439 2N3440 2N3439 2N3440 2N3439 2N3440 2N3439 2N3440 Min. 350 250 Typ. Max. Unit V 20 50 500 500 20 20 20 0.5 1.3 µA µA µA µA V V — — 40 30 160 hFE* DC Current Gain * Pulse test tp = 300µs , δ ≤ 2% DYNAMIC CHARACTERISTICS Parameter fT Cob hfe Transition Frequency Output Capacitance Small Signal Current Gain (Tcase = 25°C unless otherwise stated) Test Conditions IC = 10mA VCB = 10V IC = 5mA VCE = 10V VCE = 10V f = 5MHz f = 1MHz f = 1kHz Min. 15 Typ. Max. Unit MHz 10 pF — 25 THERMAL DATA Parameter RθJA RθJC Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case Min. Typ. Max. Unit 175 35 °C/W °C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3066 Issue: 1