2N3439DCSM

2N3439DCSM 2N3440DCSM MECHANICAL DATA Dimensions in mm (inches) HIGH VOLTAGE, MEDIUM POWER, NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS FEATURES 1.40 ± 0.15 (0.055 ± 0.006) 0.64 ± 0.08 (0.025 ± 0.003) 2.29 ± 0.20 (0.09 ± 0.008) 1.65 ± 0.13 (0.065 ± 0.005) • DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTOR 4.32 ± 0.13 (0.170 ± 0.005) 2.54 ± 0.13 (0.10 ± 0.005) 2 1 3 4 5 • HERMETIC CERAMIC SURFACE MOUNT PACKAGE • CECC SCREENING OPTIONS • SPACE QUALITY LEVELS OPTIONS • HIGH VOLTAGE A 6 0.23 rad. (0.009) 1.27 ± 0.13 (0.05 ± 0.005) 6.22 ± 0.13 (0.245 ± 0.005) A= LCC2 PACKAGE Underside View PAD 1 – Collector 1 PAD 2 – Base 1 PAD 3 – Base 2 PAD 4 – Collector 2 PAD 5 – Emitter 2 PAD 6 – Emitter 1 APPLICATIONS: Dual Hermetically sealed surface mount version of the popular 2N3439 and 2N3440 for high reliability / space applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD PD Rja Tstg Collector – Base Voltage Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IB = 0) Collector Current Per Device Dissipation Total Device Dissipation Derate above 25°C (Per Device) (Total) Thermal Resistance Junction to Ambient Storage Temperature 2N3439 450V 350V 7V 500mA 350mW 525mW 2mW / °C 3mW /°C 240°C/W –55 to 200°C 2N3440 300V 250V 7V 500mA 350mW 525mW 2mW / °C 3mW /°C 240°C/W –55 to 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 6584 Issue 1 2N3439DCSM 2N3440DCSM ELECTRICAL CHARACTERISTICS (per device) Parameter VCEO(sus)* ICEO ICEX* ICBO* IEBO* VCE(sat)* VBE(sat)* Collector – Emitter Sustaining Voltage (IB = 0) Collector Cut-off Current (IB = 0) Collector Cut-off Current (VBE = -1.5V) Collector – Base Cut-off Current (IE = 0) Emitter Cut-off Current (IC = 0) Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage IC = 50mA IC = 50mA VCE = 300V VCE = 200V VCE = 450V VCE = 300V VCB = 360V VCB = 250V VEB = 6V IC = 50mA IC = 50mA IC = 20mA hFE* DC Current Gain VCE = 10V IC = 2mA VCE = 10V * Pulse test tp = 300μs , δ ≤ 2% (Tcase = 25°C unless otherwise stated) Test Conditions 2N3439 2N3440 2N3439 2N3440 2N3439 2N3440 2N3439 2N3440 IB = 4mA IB = 4mA 2N3439 2N3440 2N3439 Min. 350 250 Typ. Max. Unit V 20 50 500 500 20 20 20 0.5 1.3 µA µA µA µA V V — — 40 30 160 DYNAMIC CHARACTERISTICS Parameter fT Cob hfe Transition Frequency Output Capacitance Small Signal Current Gain (Tcase = 25°C unless otherwise stated) Test Conditions IC = 10mA VCB = 10V IC = 5mA VCE = 10V IE = 0 VCE = 10V f = 5MHz f = 1.0MHz f = 1kHz Min. 15 Typ. Max. Unit MHz 10 pF 25 Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 6584 Issue 1