2N3440C3

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3440C3 • • • • High Voltage Hermetic Ceramic Surface Mount Package. Ideally suited for drivers in high-voltage low current inverters, switching and series regulators. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current – Continuous Base Current TA = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 300V 250V 7V 1.0A 0.5A 500mW 2.9mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols RθJA RθJSP Parameters Thermal Resistance, Junction To Ambient Thermal Resistance, Junction To Solder Pads Min. Typ. Max. 350 120 Units °C/W °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 8877 Issue 1 Page 1 of 3 Website: http://www.semelab-tt.com SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3440C3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols ICEO Parameters Collector Cut-Off Current Test Conditions VCE = 200V VCB = 300V IB = 0 IE = 0 IE = 0 TA = 150°C Min. Typ Max. 2 5 2 10 5 10 0.5 Units ICBO Collector Cut-Off Current VCB = 250V µA ICEX IEBO VCE(sat) VBE(sat) (1) Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE = 300V VEB = 7V IC = 50mA IC = 50mA IC = 0.2mA VBE = -1.5V IC = 0 IB = 4mA IB = 4mA VCE = 10V VCE = 10V VCE = 10V TA = -55°C 10 30 40 15 (1) V 1.3 hFE (1) Forward-current transfer ratio IC = 2mA IC = 20mA 160 DYNAMIC CHARACTERISTICS hfe Small signal forward-current transfer ratio Magnitude of CommonEmitter Small-Signal ShortCircuit forward Current, Transfer Ratio Output Capacitance IC = 5mA f = 1.0KHz IC = 10mA f = 5MHz VCB = 10V f = 1.0MHz VEB = 5V f = 1.0MHz IC = 20mA IB1 = 2mA IC = 20mA IB1 = - IB2 = 2mA VCC = 200V VCC = 200V IC = 0 IE = 0 VCE = 10V 3 15 MHz VCE = 10V 25 - | hfe | Cobo Cibo ton toff 10 pF Input Capacitance 75 pF Turn-On Time 1.0 µs 10 Turn-Off Time Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8877 Issue 1 Page 2 of 3 SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3440C3 MECHANICAL DATA Dimensions in mm (inches) 5.59 ± 0.13 (0.22 ± 0.005) 0.25 ± 0.03 (0.01 ± 0.001) 1.40 ± 0.15 (0.055 ± 0.006) 0.64 ± 0.08 (0.025 ± 0.003) 0.23 rad. (0.009) 3 2 1.27 ± 0.05 (0.05 ± 0.002) 3.81 ± 0.13 (0.15 ± 0.005) 4 1 0.23 min. (0.009) 1.02 ± 0.20 (0.04 ± 0.008) 2.03 ± 0.20 (0.08 ± 0.008) LCC3 (MO-041BA) Underside View Pad 1 – Collector Pad 2 – N/C Pad 3 – Base Pad 4 - Emitter S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8877 Issue 1 Page 3 of 3