2N3637CSM
MECHANICAL DATA Dimensions in mm (inches)
0.51 ± 0.10 (0.02 ± 0.004)
PNP SILICON TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
0.31 rad. (0.012)
2.54 ± 0.13 (0.10 ± 0.005)
3
2
1
0.76 ± 0.15 (0.03 ± 0.006)
FEATURES
• High Voltage Switching • Low Power Amplifier Applications
A 1.40 (0.055) max.
1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005)
0.31 rad. (0.012)
• Hermetic Ceramic Surface Mount Package
A = 1.02 ± 0.10 (0.04 ± 0.004)
LCC1
Underside View PAD 1 – Base PAD 2 – Emitter PAD 3 – Collector
APPLICATIONS:
• CECC Screening Options • Space Quality Levels Options.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCEO VCBO VEBO IC PD TJ , TSTG Collector – Emitter Voltage Collector – Base Voltage Emmiter – Base Voltage Collector Current Total Device Dissipation @ TA = 25°C Operating and Storage Junction Temperature Range -175V -175V -5V -1A 500mW –65 to +200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 6529 Issue 2
2N3637CSM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions
OFF CHARACTERISTICS
BVCEO BVCBO BVEBO IEBO ICBO Collector–Emitter Breakdown Voltage1 IC = -10mA Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Emitter Cut-off Current Collector Cut-off Current IC = -100μA IC = 0 VBE = -3.0V VCB = -100V IC = -0.1mA IC = -1.0mA hFE DC Current Gain IC = -10mA IC = -50mA IC = -150mA VCE(sat) VBE(sat) Collector – Emitter Saturation Voltage1 Base – Emitter Saturation Voltage IC = -10mA IC = -50mA IC = -10mA IC = -50mA VCE = -30V VCB = -20V VBE = 1.0V IB = 0 IE = 0 IE = -10μA IC = 0 IE = 0 VCE = -10V VCE = -10V VCE = -10V VCE = -10V VCE = -10V IB = -1.0mA IB = -5mA IB = -1.0mA IB = -5mA IC = -30mA f = 100MHz IE = 0 f = 100kHz IC = 0 f = 100kHz
Min.
-175 -175 -5.0
Typ.
Max. Unit
V -50 -100
nA
ON CHARACTERISTICS
80 90 100 100 50 -0.3 -0.5 -0.8 -0.65 -0.9 V V 300 −
SMALL SIGNAL CHARACTERISTICS
ft Cob Cib hie hre hfe hoe NF Current Gain Bandwidth Product Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance VCE = -10V RS = 1.0Ω IC = -0.5mA f = 1.0kHz VBE = 4.0V IB1 = IB2 =-5mA VCE = -10V IC = -10mA f = 1.0kHz 80 100 10 75 200 1200 3.0 320 200 3.0 MHz pF pF Ω x10-4 — μmhos dB
SWITCHING CHARACTERISTICS
ton toff Turn–On Time Turn–Off Time VCC = -100V IC = -50mA 400 600 ns
1) Pulse test : Pulse Width < 300μs ,Duty Cycle < 2%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 6529 Issue 2
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