2N3725

2N3725 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) HIGH VOLTAGE, HIGH CURRENT, HIGH SPEED, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED TO-39 METAL PACKAGE FOR HIGH RELIABILITY APPLICATIONS FEATURES 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. • SILICON PLANAR EPITAXIAL NPN TRANSISTOR • HERMETIC METAL PACKAGE • CECC SCREENING OPTIONS 5.08 (0.200) typ. • SPACE QUALITY LEVELS OPTIONS 2.54 (0.100) • JAN LEVEL SCREENING OPTIONS • HIGH SPEED SATURATED SWITCHING 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 APPLICATIONS: 45° TO-39 METAL (TO205AD) PIN 1 – Emitter PIN OUTS PIN 2 – Base PIN 3 – Collector Hermetically sealed 2N3725 for high reliability applications. Suitable for memory application. ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C unless otherwise stated) VCBO VCES VCEO VEBO IC Ptot Tj Tstg Collector-base Voltage (IE = 0) Collector-emitter Voltage (VBE = 0) Collector-emitter Voltage (IB = 0) Emitter-base Voltage (IC = 0) Collector Current Total Power Dissipation at Tamb ≤ 25 °C at Tcase ≤ 25 °C Junction Temperature Storage Temperature 80V 80V 50V 6V 1A 0.8W 3.5W – 65 to 200 °C – 65 to 200 °C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 4303 Issue 1 2N3725 ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Parameter ICBO V(BR)CBO V(BR)CES V(BR)CEO* V(BR)EBO VCE(sat ) * Collector Cutoff Current (IE = 0) Collector-Base Breakdown Voltage (IE = 0) Collector-Emitter Breakdown Voltage (VBE = 0) Collector-Emitter Breakdown Voltage (IB = 0) Test Conditions VCB = 60 V VCB = 60 V IC = 10 µA IC = 10 µA IC = 10 mA IE = 10 µA IC = 10 mA IC = 100 mA IC = 300 mA IC = 500 mA IC = 800 mA IC = 1000 mA IB = 1 mA IB = 10 mA IB = 30 mA IB = 50 mA IB = 80 mA IB = 100 mA IB = 1 mA IB = 10 mA IB = 30 mA IB = 50 mA IB = 80 mA IB = 100 mA VCE = 1 V VCE = 1 V VCE = 1 V VCE = 5 V VCE = 2 V VCE = 1 V VCE = 10 V VCB = 10 V VCB = 0.5 V Tamb = 100 `C Min. Typ. Max. 1.7 120 Unit µA V V V V 80 80 50 6 0.19 0.21 0.31 0.4 0.5 0.6 0.64 0.75 0.89 0.9 1.0 1.1 30 60 40 25 20 35 3 10 55 35 60 60 90 60 65 40 150 0.25 0.26 0.4 0.52 0.8 0.95 0.76 0.86 1.1 1.2 1.5 1.7 Emitter-Base Breakdown Voltage (IC = 0) Collector-Emitter Saturation Voltage V VBE(sat ) * Base-Emitter Saturation Voltage IC = 10 mA IC = 100 mA IC = 300 mA IC = 500 mA IC = 800 mA IC = 1000 mA V hFE* DC Current Gain IC = 10 mA IC = 100 mA IC = 300 mA IC = 1000 mA IC = 800 mA IC = 500 mA hfe CCBO CEBO ton toff High Frequency Current Gain (f = 100Mhz) Collector-Base Capacitance (f = 1Mhz) Emitter-Base Capacitance (f = 1Mhz) Turn-on Time Turn off Time IC = 50 mA IE = 0 IC = 0 pF pF ns ns VCC = 30 V IC = 500 mA IB = 50 mA VCC = 30 V IC = 500 mA IB1 = – IB2 = 50 mA * Pulsed : pulse duration = 300µs, duty cycle = 1% THERMAL DATA (Tcase = 25°C unless otherwise stated) Parameter R th j-case R th j-amb Test Conditions Min. Typ. Max. 50 220 Unit °C/W °C/W Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 4303 Issue 1