2N3767SMD05

2N3767SMD05 MECHANICAL DATA Dimensions in mm (inches) 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 2.41 (0.095) 0.127 (0.005) 3.175 (0.125) Max. 3.05 (0.120) 1 3 10.16 (0.400) NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH REL APPLICATIONS 0.76 (0.030) min. 5.72 (.225) 2 FEATURES 0.127 (0.005) 16 PLCS 0.50(0.020) 7.26 (0.286) 0.127 (0.005) • HIGH VOLTAGE 0.50 (0.020) max. • FAST SWITCHING • CERAMIC SURFACE MOUNT PACKAGE • SCREENING OPTIONS AVAILABLE SMD05 (TO-276AA) Underside View PIN 1 – Base PIN 2 – Collector PIN 3 – Emitter ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IB IC TJ ,TSTG PD Collector– Base Voltage (IE = 0) Collector– Emitter Voltage (IB = 0) Emiiter– Base Voltage (IB = 0) Base Current Collector Current Operating and Storage Junction Temperature Range Total Device Dissipation @ TC = 25°C Derate above 25°C 100V 80V 6V 2A 4A –55 to +150°C 25W 5°C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3781 Issue 3 2N3767SMD05 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter Test Conditions OFF CHARACTERISTICS V(BR)CEO ICEX IEBO ICEO ICBO Collector Emitter Breakdown Voltage1 Collector Cutoff Current Emitter Base Cutoff Current Collector Emitter Cutoff Current Collector Base Cutoff Current IC = 100mA VCE = 100V VCE = 70V VEB = 6V VCE = 80V VCB = 100V IC = 50mA hFE VCE(sat) VBE fT COB hfe DC Current Gain Collector Emitter Saturation Voltage Base Emitter Voltage IC = 500mA IC = 1.0A IC = 1.0A IC = 1.0A VCE = 10V VCB = 10V VCE = 10V IB = 0 VBE = 1.5V VBE = 1.5V TA = 150°C IC = 0 IB = 0 IE = 0 VCE = 5V VCE = 5V VCE = 10V IB = 0.1A VCE = 10V IC = 500mA f = 10MHz Common Base Output Capacitance Small Signal Current Gain IC = 0A f = 100KHz IC = 100mA f = 1.0kHz 1) Pulse test : Pulse Width < 100µs ,Duty Cycle