2N3767_10

SILICON NPN TRANSISTOR 2N3767 • • • • • Low Saturation Voltage High Gain Characteristics Hermetic TO66 Metal Package High Reliability Screening Options Available Switching and Medium Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB PT TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Base Current Total Power Dissipation at TC = 25°C De-rate Above TC = 25°C Junction Temperature Range Storage Temperature Range 100V 80V 6.0V 4.0A 2.0A 25W 143mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols RθJC Parameters Thermal Resistance, Junction To Case Min. Typ. Max. 7.0 Unit °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 9157 Issue 1 Page 1 of 2 Website: http://www.semelab-tt.com SILICON NPN TRANSISTOR 2N3767 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols V(BR)CEO ICEO IEBO ICEX (1) Parameters Collector-Emitter Breakdown Voltage Collector-Emitter Cut off Current Emitter-Base Cut-Off Current Collector-Emitter Cut-Off Current Collector-Base Cut-Off Current Base-Emitter Voltage Test Conditions IC = 100mA VCE = 80V VEB = 6.0V VCE = 100V VCE = 70V VCB = 100V VCE = 10V IC = 50mA IC = 0 VBE = -1.5V VBE = -1.5V TA = 150°C IE = 0 IC = 1.0A VCE = 5V VCE = 5V TA = -55°C IC = 1.0A VCE = 10V IB = 50mA IB = 100mA IB = 100mA IB = 0 Min. 80 Typ. Max. Unit V 500 500 10 1.0 10 1.5 30 40 13 20 1.0 2.5 1.5 V 160 mA µA V µA ICBO VBE (1) hFE (1) DC Current Gain IC = 500mA VCE(sat) VBE(sat) (1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = 500mA IC = 1.0A IC = 1.0A (1) DYNAMIC CHARACTERISTICS |hfe| Magnitude of Small-Signal Short-Circuit Current Gain Output Capacitance Turn On Time Turn Off Time IC = 500mA f = 10MHz VCB = 10V f = 1.0MHz VCC = 30V IB1 = 50mA 3.68 (0.145) rad. max. VCE = 10V IE = 0 IC = 500mA IB2 = - IB1 1.0 8.0 Cobo ton toff 50 0.25 2.5 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. pF µs Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% MECHANICAL DATA Dimensions in mm (inches) TO66 (TO-213AA) METAL PACKAGE Underside Underside View 14.48 (0.570) 14.99 (0.590) PIN 1 - Base PIN 2 - Emitter Case - Collector 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 9157 Issue 1 Page 2 of 2 11.94 (0.470) 12.70 (0.500) 24.13 (0.95) 24.63 (0.97) 1 2 0.71 (0.028) 0.86 (0.034)