2N3799X

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N3799X • • • Low Noise Hermetic TO-18 Metal package. Ideally suited for Low Level Amplifier. Instrumentation Amplifiers and General Purpose Applications Screening Options Available • ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current TA = 25°C Total Power Dissipation at Derate Above 25°C TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range -60V -50V -5V -50mA 360mW 2.06mW/°C 1.2W 6.86mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols RθJA RθJC Parameters Thermal Resistance, Junction To Ambient Thermal Resistance, Junction To Case Min. Typ. Max. Units 486.11 °C/W 145.83 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 8240 Issue 1 Page 1 of 3 Website: http://www.semelab-tt.com SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N3799X ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols V(BR)CEO (1) Parameters Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Test Conditions IC = -10mA IC = -10µA IE = -10µA VCB = -50V IB = 0 IE = 0 IC = 0 IE = 0 TA = 150°C VEB = -4V IC = -100µA IC = -1.0mA IC = -100µA IC = -1.0mA IC = -100µA IC = -1.0µA IC = -10µA IC = -100µA IC = 0 IB = -10µA IB = -100µA IB = -10µA IB = -100µA VCE = -5V VCE = -5V VCE = -5V VCE = -5V TA = -55°C IC = -500µA IC = -1.0mA IC = -10mA VCE = -5V VCE = -5V VCE = -5V Min. -60 -50 -5 Typ Max. Units V(BR)CBO V(BR)EBO ICBO IEBO VCE(sat) (1) V -0.01 -10 -20 -0.2 -0.25 -0.7 -0.8 -0.7 75 225 300 150 300 300 250 µA nA Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage VBE(sat) VBE(on) (1) V hFE (1) Forward-current transfer ratio Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8240 Issue 1 Page 2 of 3 SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N3799X DYNAMIC CHARACTERISTICS IC = -500µA fT Transition Frequency f = 20MHz IC = -1.0mA f = 100MHz Cobo Output Capacitance VCB = -5V f = 1.0MHz Input Capacitance Input Impedance Output Admittance Voltage Feedback Ratio Small Signal Current Gain f=100Hz BW=20Hz VCE = -10V NF Noise Figure IC = -100µA RG = 3K Spot: f=1.0KHz BW=200Hz f=10KHz BW=2KHz f=1.0KHz 1.5 2.5 1.8 1.5 0.8 1.5 dB IC = -1.0mA f = 1.0MHz 300 2.5 VCE = -10V VEB = -0.5V f = 1.0MHz 10 5 40 60 25 900 4 K µhmos x 10-4 IC = 0 8 IE = 0 4 pF VCE = -5V 100 500 VCE = -5V 30 MHz Cibo hie hoe hre hfe Noise: Noise: MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) TO-18 (TO-206AA) METAL PACKAGE Underside View Pin 1 - Emitter Pin 2 - Base Pin 3 - Collector 3 2 1 S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8240 Issue 1 Page 3 of 3