2N3810DCSM_09

SILICON DUAL MATCHED PNP TRANSISTORS 2N3810DCSM • • • Matched Dual Transistor. Dual Ceramic Hermetic Package Suitable For High Gain, Low Noise, Differential Amplifier, Applications. Screening Options Available • ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current TA = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range Each Side Total Device -60V -60V -5V -50mA 500mW 600mW(1) 2.86mW/°C 3.43mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES (Each Side) Symbols RθJA Parameters Thermal Resistance, Junction To Ambient Min. 1Typ. Max. 350 Units °C/W Notes Notes (1) Total device power dissipation limited by package. Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 2873 Issue 2 Page 1 of 4 Website: http://www.semelab-tt.com SILICON DUAL MATCHED PNP TRANSISTORS 2N3810DCSM ELECTRICAL CHARACTERISTICS (Each Side, TA = 25°C unless otherwise stated) Symbols V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO (2) Parameters Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cut-Off Current Emitter-Cut-Off Current Test Conditions IC = -10µA IC = -10mA IE = -10µA VCB = -50V IE = 0 IB = 0 IC = 0 IE = 0 TA = 150°C VEB = -4V IC = -10µA IC = -100µA IC = 0 VCE = -5V VCE = -5V TA = -55°C IC = -500µA IC = -1.0mA IC = -10mA VCE = -5V VCE = -5V VCE = -5V VCE = -5V IB = -10µA IB = = -100µA IB = -10µA IB = = -100µA Min. -60 -60 -5 Typ Max. Units V -10 -10 -20 100 150 60 150 150 125 -0.7 -0.7 -0.8 -0.2 -0.25 450 450 450 nA µA nA hFE (2) Forward-current transfer ratio VBE (2) Base-Emitter Voltage (2) IC = -100µA IC = -100µA IC = -1.0mA IC = -100µA IC = -1.0mA VBE(sat) Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage V VCE(sat) (2) ELECTRICAL MATCHING CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols hFE1 hFE2 (3) Parameters Forward-current transfer ratio (gain ratio) Base-Emitter Voltage Differential Test Conditions IC = -100µA VCE = -5V VCE = -5V Min. 0.9 Typ Max. 1.0 Units |VBE1-VBE2| IC = -10µA to -10mA VCE = -5V VCE = -5V IC = -100µA IC = -100µA TA2 = -55°C IC = -100µA TA2 = 125°C 5 3 0.8 mV |∆(VBE1-VBE2)∆TA| Base-Emitter Voltage Differential Change Due To Temperature TA1 = 25°C VCE = -5V TA1 = 25°C mV 1.0 Notes Not Notes (2) Pulse Width ≤ 300us, δ ≤ 2% (3) The lower of the two readings is taken as hFE1 S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 2873 Issue 2 Page 2 of 4 SILICON DUAL MATCHED PNP TRANSISTORS 2N3810DCSM DYNAMIC CHARACTERISTICS Symbols Parameters Test Conditions IC = -500µA |hfe| Small signal forward-current transfer ratio f = 30MHz IC = -1.0mA f = 100MHz Cobo Cibo hie (4) Min. 1.0 Typ Max. Units VCE = -5V VCE = -5V VCB = -5V VEB = -0.5V 1.0 5 Output Capacitance IE = 0 f = 1.0MHz IC = 0 f = 1.0MHz 4 pF 15 3 30 60 25 150 600 7 K Input Capacitance Input Impedance Output Admittance Voltage Feedback Ratio Small Signal Current Gain hoe hre (4) IC = -1.0mA f = 1.0KHz VCE = -10V 5 µhmos x 10-4 (4) hfe f=100Hz BW=20Hz Noise Figure VCE = -10V IC = -100µA RG = 3K f=1.0KHz BW=200Hz f=10KHz BW=2KHz Noise Figure (Broadband) Notes Not Notes (4) By design only, not a production test. NF (4) 3 dB 2.5 3.5 f=10Hz to 15.7KHz S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 2873 Issue 2 Page 3 of 4 SILICON DUAL MATCHED PNP TRANSISTORS 2N3810DCSM MECHANICAL DATA Dimensions in mm (inches) 2.29 ± 0.20 (0.09 ± 0.008) 1.65 ± 0.13 (0.065 ± 0.005) 1.40 ± 0.15 (0.055 ± 0.006) 0.64 ± 0.06 (0.025 ± 0.003) 2.54 ± 0.13 (0.10 ± 0.005) 2 1 A 3 4 5 6 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) 6.22 ± 0.13 (0.245 ± 0.005) LCC2 (MO-041BB) Underside View Pad 1 – Collector 1 Pad 2 – Base 1 Pad 3 – Base 2 Pad 4 – Collector 2 Pad 5 – Emitter 2 Pad 6 – Emitter 1 S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 2873 Issue 2 Page 4 of 4 4.32 ± 0.13 (0.170 ± 0.005)