2N3904-T18

2N3904-T18 MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) 5.33 (0.210) 4.32 (0.170) GENERAL PURPOSE HERMETIC NPN SILICON TRANSISTOR FEATURES • • • • SILICON NPN EPITAXIAL TRANSISTOR HERMETIC TO18 PACKAGE HI-REL SCREENING OPTIONS AVAILABLE HIGH SPEED SATURATED SWITCHING 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 12.7 (0.500) min. APPLICATIONS 3 2 1 TO-18 (TO-206AA) Pin 1 – Emitter Underside View Pin 2 – Base Pin 3 – Collector A hermetically sealed TO18 version of the popular 2N3904 plastic part intended for high reliability applications. ABSOLUTE MAXIMUM RATINGS T VCBO VCEO VEBO IC PD TJ / Stg CASE = 25° C unless otherwise stated Collector - Base Voltage Collector - Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Continuous Collector Current Total Power Dissipation at TA = 25°C Derate Above 25°C Operating and Storage Temperature Range 60V 40V 6.0V 200mA 0.31W 1.8mW/°C -65 to +200°C THERMAL DATA RθJA Thermal Resistance Junction - Ambient Max 565 ° C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk DOC 8022, ISSUE 1 2N3904-T18 ELECTRICAL CHARACTERISTICS (T Symbol V(BR)CEO* V(BR)CBO V(BR)EBO ICEX Parameter Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Collector Emitter Cut-Off Current =25°C unless otherwise stated) Min. IB = 0 IE = 0 IC = 0 VEB = 3V VCE = 1.0V VCE = 1.0V VCE = 1.0V VCE = 1.0V VCE = 1.0V VCE = 10V IB = 1.0mA IB = 5.0mA IB = 1.0mA IB = 5.0mA 40 60 6 40 70 100 60 30 100 0.65 Typ. Max. 50 300 400 0.2 0.3 V 0.85 0.95 nA V Unit case Test Conditions IC = 1.0mA IC = 10µA IE = 10µA VCE = 30V IC = 0.1mA IC = 1.0mA hFE* DC Current Gain (VCE = 10V) IC = 10mA IC = 50mA IC = 100mA hfe VCE(sat)* Small Signal Current Gain f=1.0KHz Collector-Emitter Saturation Voltage IC = 1.0mA IC = 10mA IC = 50mA VBE(sat)* Base-Emitter Saturation Voltage IC = 10mA IC = 50mA DYNAMIC CHARACTERISTICS (T fT Cobo CIBO Current Gain – Bandwidth Product case =25°C unless otherwise stated) VCE = 20V VCB = 5V VEB = 0.5V 300 MHz IC = 10mA f = 100MHz IE = 0 f = 1.0MHz IC = 0 f = 1.0MHz IC = 100µA f = 1.0KHz Output Capacitance - - 4 pF Input Capacitance - - 8 NF td tr ts tf Noise Figure Delay Time Rise Time ! VCE = 5V RS = 1KΩ VBE = 0.5V IB1 = 1.0mA VBE = 0.5V IB1=IB2= 1.0mA - - 5 35 35 dB VCC = 3V IC = 10mA VCC = 3V IC = 10mA ns 200 50 Storage Time Fall Time * Pulse test tp = 300µs, δ < 2% ! Parameter characteristic verified by design only Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk DOC 8022, ISSUE 1