2N3904DCSM

SILICON EPITAXIAL DUAL NPN TRANSISTORS 2N3904DCSM • • • • Dual Silicon Planar NPN Transistors. Hermetic Ceramic Surface Mount Package. Designed For General Purpose and Switching Applications. Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current TA = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range Each Side Total Device 60V 40V 6V 200mA 500mW 600mW(1) 2.86mW/°C 3.43mW/°C -55 to +200°C -55 to +200°C THERMAL PROPERTIES (Each Side) Symbols RθJA Parameters Thermal Resistance, Junction To Ambient Min. Typ. Max. 350 Units °C/W Notes Notes (1) Total device power dissipation limited by package. Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 9009 Issue 1 Page 1 of 3 Website: http://www.semelab-tt.com SILICON EPITAXIAL DUAL NPN TRANSISTORS 2N3904DCSM ELECTRICAL CHARACTERISTICS (Each Side, TA = 25°C unless otherwise stated) Symbols ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO (2) Parameters Collector-Cut-Off Current Emitter Cut-Off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Test Conditions VCB = 30V VEB = 3V IC = 10µA IC = 1.0mA IE = 10µA IC = 0.1mA IC = 1.0mA IE = 0 IC = 0 Min. Typ Max. 30 30 Units nA 60 40 6 40 70 VCE = 1.0V 100 60 30 IB = 1.0mA IB = 5mA IB = 1.0mA IB = 5mA 0.65 0.85 0.95 0.2 0.3 1.45 TA = 100°C 2 V 300 V hFE (2) Forward-current transfer ratio IC = 10mA IC = 50mA IC = 100mA VBE(sat) (2) Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Forward Base-Emitter Voltage IC = 10mA IC = 50mA IC = 10mA IC = 50mA IB = 500mA IB = 200mA VCE(sat) (2) (2) VBE(f) DYNAMIC CHARACTERISTICS fT Transition Frequency IC = 10mA f = 100MHz Small-Signal Current Gain IC = 1.0mA f = 1.0KHz Output Capacitance VCB = 5V f = 1.0MHz Input Capacitance VEB = 0.5V f = 1.0MHz IC = 100 µA NF (3) VCE = 20V 300 MHz hfe VCE = 10V 100 400 Cobo IE = 0 4 pF 8 Cibo IC = 0 VCE = 5V 5 dB Noise Figure RS = 1.0K f = 10Hz To 15.7KHz td tr ts tf Delay Time Rise Time Storage Time Fall Time VCC = 3V IC = 10mA VCC = 3V VBE = 0.5V IB1 = 1.0mA IC = 10mA 35 35 200 50 ns IB1 = IB2 = 1.0mA Notes Notes (2) Pulse Width ≤ 300us, δ ≤ 2% (3) By design only, not a production test. S emelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 9009 Issue 1 Page 2 of 3 Website: http://www.semelab-tt.com SILICON EPITAXIAL DUAL NPN TRANSISTORS 2N3904DCSM MECHANICAL DATA Dimensions in mm (inches) 2.29 ± 0.20 (0.09 ± 0.008) 1.65 ± 0.13 (0.065 ± 0.005) 1.40 ± 0.15 (0.055 ± 0.006) 0.64 ± 0.06 (0.025 ± 0.003) 2.54 ± 0.13 (0.10 ± 0.005) 2 1 A 3 4 5 6 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) 6.22 ± 0.13 (0.245 ± 0.005) LCC2 (MO-041BB) Underside View Pad 1 – Collector 1 Pad 2 – Base 1 Pad 3 – Base 2 Pad 4 – Collector 2 Pad 5 – Emitter 2 Pad 6 – Emitter 1 S emelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 9009 Issue 1 Page 3 of 3 4.32 ± 0.13 (0.170 ± 0.005)