2N4033_01

2N4033 MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) HIGH SPEED MEDIUM VOLTAGE SWITCH 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. DESCRIPTION The 2N4033 is a silicon expitaxial planar PNP transistors in jedec TO-39 metal case intended for use in switching applications. 5.08 (0.200) typ. 2 1 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 3 45° TO-39 Pin 1 – Emitter Pin 2 – Base Pin 3 – Collector ABSOLUTE MAXIMUM RATINGS Tcase = 25°c unless otherwise stated VCEO VCBO VEBO IC PD PD Tstg Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Continuous Collector Current Total Device Dissipation at TA = 25°C Derate above 25°C Total Device Dissipation at TC = 25°C Derate above 25°C Operating and Storage Temperature Range -80V -80V -5V -1A 0.8W 4.56 mW/°C 4W 22.8mW/°C –65 to +200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3069 Issue:1 2N4033 THERMAL CHARATERISTICS Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 25 140 °C/W °C/W ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. ICBO IEBO VCE(sat) VBE(sat) VBE(on) V(BR)CEO V(BR)CBO V(BR)EBO Collector Cut Off Current Emitter Cut Off Current Collector Emitter Saturation Voltage1 Base Emitter Saturation Voltage1 Base Emitter on Voltage Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage VCB = -60V VEB = -5V IC = -150mA IC = -500mA IC = -150mA IC = -500mA IC = -10mA IC = -10µA IE = -10µA IC = -100mA IC = -100µA IC = -100mA IC = -500mA IC = -1.0A VCE = -5.0V @-55°C1 hFE DC Current Gain VCE = -5.0V VCE = -5.0V1 VCE = -5.0V1 VCE = -5.0V1 f = 1MHz f = 1MHz VCE = -10V 1.5 IB = -15mA IB = -50mA IB = -15mA VCE = -0.5V1 -80 -80 -5.0 40 75 100 70 25 TA = 150°C Typ. Max. -50 -50 -10 -0.15 0.50 -0.9 -1.1 Unit nA µA µA V V V V V V 300 — SMALL SIGNAL CHARACTERISTICS Cobo Cibo hfe Output Capacitance Input Capacitance Small Signal Gain VCE = -10V VEB = -0.5V IC = -50mA f = 100MHz 20 110 5.0 pF — SWITCHING CHARACTERISTICS ton tf ts 1Pulse Turn On Time Fall Time Storage Time test tp = 300µs , δ = 1% IC = -500mA IB1=-IB2 = -50mA 100 50 350 ns Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3069 Issue:1