2N4239

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N4239 • • • VCBO=100V(Min), VCEO=80V(Min) Hermetic TO-39 Metal package. Ideally suited for General Purpose and Amplifier Applications Screening Options Available • ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB PD PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Base Current TA = 25°C Total Power Dissipation at Derate Above 25°C TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 100V 80V 6V 1.0A 0.5A 1.0W 5.7mW/°C 6W 34mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols RθJA RθJC Parameters Thermal Resistance, Junction To Ambient Thermal Resistance, Junction To Case Min. Typ. Max. 175 29 Units °C/W °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 8369 Issue 1 Page 1 of 3 Website: http://www.semelab-tt.com SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N4239 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols V(BR)CEO (1) Parameters Collector-Emitter Breakdown Voltage Collector Cut-Off Current Test Conditions IC = 10mA VCE = 100V IB = 0 VBE = -1.5V VBE = -1.5V TA = 150°C IE = 0 IC = 0 VCE = 1.0V VCE = 1.0V TA = -55°C IC = 500mA VCE = 1.0V IB = 50mA IB = 0.1A IB = 50mA IB = 0.1A Min. 80 Typ Max. Units V 100 25 100 0.5 30 30 15 30 0.3 0.6 1.0 1.5 150 nA µA nA mA ICEX VCE = 70V VCB = 100V VEB = 6V IC = 100mA ICBO IEBO Collector Cut-Off Current Emitter Cut-Off Current hFE (1) Forward-current transfer ratio IC = 250mA VCE(sat) (1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = 500mA IC = 1.0A IC = 500mA IC = 1.0A V VBE(sat) (1) DYNAMIC CHARACTERISTICS | hfe | Small signal forward-current transfer ratio Output Capacitance IC = 100mA f = 10MHz VCB = 10V f = 1.0MHz IE = 0 100 pF VCE = 10V 3.0 Cobo Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8369 Issue 1 Page 2 of 3 SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N4239 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 3 45° TO-39 (TO-205AD) METAL PACKAGE Underside View Pin 1 - Emitter Pin 2 - Base Pin 3 - Collector S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8369 Issue 1 Page 3 of 3