2N4339

2N4339 MECHANICAL DATA Dimensions in mm (inches) LOW NOISE N-CHANNEL JFET DESIGNED FOR SENSITIVE AMPLIFIER STAGES IN A HERMETICALLY SEALED PACKAGE FOR HIGH RELIABILITY APPLICATIONS FEATURES • LOW CUTOFF VOLTAGE 5.33 (0.210) 4.32 (0.170) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) • HIGH INPUT IMPEDANCE • VERY LOW NOISE • HIGH GAIN • CECC SCREENING OPTIONS • JAN LEVEL SCREENING OPTIONS 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 3 2 1 12.7 (0.500) min. APPLICATIONS: TO-46 (TO-206AA) PAD 1 – Source Underside View PAD 2 – Drain PAD 3 – Gate • • • High Gain, Low Noise Amplifiers Low Current, Low Voltage Battery Powered Amplifiers Ultrahigh Input Impedance PreAmplifiers ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDS VDG VGS IG PD TJ TSTG Drain – Source Voltage Drain – Gate Voltage Gate – Source Voltage Gate Current Total Device Dissipation at TAMB = 25°C Derate above 25°C Operating Temperature Range Storage Temperature Range 50V 50V 50V 50mA 300mW 2mW/°C –55 to +175°C –65 to +200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3887 Issue 1 2N4339 OFF ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter V(BR)GSS IGSS VGS(OFF) Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage Test Conditions IG = -1µA VGS = -30V VDS = 15V ID = 0.1µA Min. 50 Typ. Max. 0.1 Unit V nA V -0.6 -1.8 ON ELECTRICAL CHARACTERISTICS Parameter IDSS Zero Gate Voltage Drain Current Test Conditions VDS = 15V Min. 0.5 Typ. Max. 1.5 Unit mA SMALL SIGNAL CHARACTERISTICS Parameter |Yfs| |Yos| Ciss Crss rds(on) Forward Transfer Admittance Output Admittance Input Capacitance Reverse Transfer Capacitance Drain Source On Resistance Test Conditions VDS = 15V VDS = 15V VDS = 0V VGS = 0V f = 1.0KHz f = 1.0KHz f = 1.0KHz Min. 800 Typ. Max. 2400 15 6.0 2.0 1700 Unit µS pF FUNCTIONAL CHARACTERISTICS Parameter NF Noise Figure Test Conditions VDS = 15V RG = 1.0M f = 1.0KHz Min. Typ. Max. 1.0 Unit dB Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3887 Issue 1