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2N4392CSM_03

2N4392CSM_03

  • 厂商:

    SEME-LAB

  • 封装:

  • 描述:

    2N4392CSM_03 - SMALL SIGNAL N–CHANNEL J–FET IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE F...

  • 详情介绍
  • 数据手册
  • 价格&库存
2N4392CSM_03 数据手册
LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N4392CSM SMALL SIGNAL N–CHANNEL J–FET IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS FEATURES 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) • CECC SCREENING OPTIONS • SPACE QUALITY LEVELS OPTIONS 2.54 ± 0.13 (0.10 ± 0.005) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) 0.76 ± 0.15 (0.03 ± 0.006) 0.31 rad. (0.012) A 1.40 (0.055) max. A = 1.02 ± 0.10 (0.04 ± 0.004) APPLICATIONS: SOT23 CERAMIC (LCC1 PACKAGE) Underside View PAD 2 – Drain PAD 1 – Source PAD 3 – Gate Hermetically sealed surface mount version of the popular 2N4392 for high reliability / space applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C unless otherwise stated) VDS VDG VGS IG PD TJ , TSTG Drain – Source Voltage Drain – Gate Voltage Gate – Source Voltage Forward Gate Current Power Dissipation @ TA = 25°C Derate above 25°C Operating Junction and Storage Temperature Range 40V 40V 40V 50mA 500mW 2.85mW / °C –65 to +175°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3872 Issue 1 LAB ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Parameter V(BR)GSS Gate – Source Breakdown Voltage VGS VGS(f) IGSS ID(off) IDSS* VDS(on) RDS(on) CISS CRSS RDS(on) tr tf ton toff Gate – Source Voltage Gate – Source Forward Voltage Gate Reverse Current Drain Cut–off Current Zero Gate Voltage Drain Current Drain – Source On Voltage Drain – Source On Resistance Input Capacitance Reverse Transfer Capacitance Static Drain – Source On Resistance Rise Time Fall Time Turn-On Time Turn-Off Time SEME 2N4392CSM Test Conditions VDS = 0 VDS = 20V VDS = 0 VDS = 0 VDS = 20V VDS = 20V VGS = 0 VGS = 0 VDS = 20V f = 1MHz VDS = 0 f = 1MHz VGS = 0 ID(on) = 6mA VGS(off) = 7V ID(on) = 6mA VGS(off) = 7V ID = 1mA VGS = –7V IG = 1µA ID = 1nA IG = 1mA VGS = 20V VGS = –7V VGS = 0 ID = 6mA ID = 1mA VGS = 0 Min. 40 –2 Typ. Max. Unit –5 1 0.1 0.1 nA mA V Ω V 25 75 0.4 60 14 pF 3.5 60 5 20 15 35 ns Ω Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3872 Issue 1
2N4392CSM_03
1. 物料型号:2N4392CSM

2. 器件简介: - 2N4392CSM是一款小型信号N沟道JFET,采用密封陶瓷表面贴装封装,适用于高可靠性应用。 - 该器件为SOT23兼容的全密封陶瓷表面贴装封装,提供CECC筛选选项和空间质量等级选项。

3. 引脚分配: - PAD 1 – 源极(Source) - PAD 2 – 漏极(Drain) - PAD 3 – 栅极(Gate)

4. 参数特性: - 漏源电压(Vps):40V - 漏栅电压(VDG):40V - 栅源电压(VGS):40V - 前向栅电流(IG):50mA - 功率耗散(PD):500mW(在25°C时) - 工作结温和存储温度范围(TJ,TSTG):-65至+175°C

5. 功能详解: - 该JFET具有低功耗和高开关速度的特点,适用于需要小尺寸和低重量的高可靠性/空间应用。 - 电气特性表中详细列出了在不同测试条件下的最小值、典型值和最大值。

6. 应用信息: - 适用于SOT23陶瓷(LCC1封装)的高可靠性/空间应用。

7. 封装信息: - 封装类型为全密封陶瓷表面贴装封装,与SOT23兼容。
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