2N4416

2N4416A 2N4416A MECHANICAL DATA Dimensions in mm (inches) 4.95 (0.195) 4.52 (0.178) 4.95 (0.195) 4.52 (0.178) SMALL SIGNAL N–CHANNEL J–FET THAT IS DESIGNED TO PROVIDE HIGH PERFORMANCE AMPLIFICATION AT HIGH FREQUENCIES 5.33 (0.210) 4.32 (0.170) FEATURES • EXCELLENT HIGH FREQUENCY GAINS • CECC SCREENING OPTIONS • SPACE QUALITY LEVEL OPTIONS 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 4 3 2 1 12.7 (0.500) min. APPLICATIONS: The 2N4416 and 2N4416A are N-Channel JFETs designed to provide high-performance amplification, especially at high-frequency. TO-72 (TO-206AF) PIN 1 - Case PIN 3 -Drain PIN 2 - Gate PIN 4 - Source ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C unless otherwise stated) VGD VGS IG PD Tj Tstg Gate – Drain Voltage Gate – Source Voltage Gate Current Power Dissipation Derate Operating Junction Temperature Range Storage Temperature Range 2N4416 –30V –30V 2N4416A –35V –35V 10mA 300mW 2.4mW / °C –55 to 150°C –55 to 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3631 Issue 1 2N4416A 2N4416A ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise stated) Parameter STATIC CHARACTERISTICS V(BR)GSS Gate – Source Breakdown Voltage VGSS(off) IDSS* IGSS IG ID(off) VGS(F) RDS(on) gfs gos Ciss Crss Coss _ en Gate – Source Cut–off Voltage Saturation Current Gate Reverse Current Gate Operating Current Drain Cut–off Current Gate – Source Forward Voltage Drain – Source On Resistance DYNAMIC CHARACTERISTICS Common – Source Forward Transconductance Common – Source Output Transconductance Common – Source Input Capacitance Common – Source Reverse Transfer Capacitance Common – Source Output Capacitance Equivalent Input Noise Voltage VDS = 10V f = 1kHz VGS = 0V VDS = 15V f = 1MHz VGS = 0V VDS = 15V f = 1kHz VGS = 0V 4.5 6 15 2.2 0.7 1 6 7.5 50 4 0.8 2 √Hz Test Conditions VDS = 0V IG = –1µA VDS = 15V ID = 1nA VDS = 15V VGS = –20 VDG = 10V VDS = 10V IG = 1mA VGS = 0V 2N4416 2N4416A 2N4416 2N4416A VGS = 0V VDS = 0V Tamb = 125°C ID = 1mA VGS = –10V VDS = 0V ID = 1mA Min. –30 –35 –2.5 5 Typ. –36 –36 –3 –3 10 –2 –4 –20 2 0.7 150 Max. Unit –6 –6 15 –100 –100 V mA pA nA pA V Ω ms µs pF nV Pulse Test; PW = 300µs, Duty Cycle # 3% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3631 Issue 1