2N5015_08

2N5015 2N5015S MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) HIGH VOLTAGE SILICON EPITAXIAL NPN TRANSISTOR 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. FEATURES • • • • • 2.54 (0.100) 5.08 (0.200) typ. SILICON PLANAR EPITAXIAL NPN TRANSISTOR HIGH BREAKDOWN VOLTAGE LOW SATURATION VOLTAGE HERMETIC TO5 or TO39 (‘S’ Suffix) PACKAGE HI-RELIABILITY SCREENING OPTIONS AVAILABLE 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 APPLICATIONS For high reliability general purpose high voltage switching and linear applications requiring small size and low weight devices. 45° TO5 (TO-205AA) PIN 1 – Emitter Underside View PIN 2 – Base PIN 3 – Collector ABSOLUTE MAXIMUM RATINGS TCASE = 25°C unless otherwise stated VCBO VCER VEBO IC Ptot Tstg, TJ Collector - Base Voltage Collector - Emitter Voltage (RBE = 1.0KΩ) Emitter – Base Voltage Continuous Collector Current Total Power Dissipation Tcase = 50°C De-rate Linearly Tcase > 25°C Operating and Storage Temperature Range 1000V 1000V 5V 0.5A 2W 20mW/°C -55 to +150°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk DOC 7992 issue 1 2N5015 2N5015S THERMAL CHARACTERISTICS RθJC RθJA Thermal Resistance Junction - Case Thermal Resistance Junction - Ambient Max Max =25°C unless otherwise stated) 50 175 °C/W °C/W ELECTRICAL CHARACTERISTICS (T Parameter V(BR)CER* V(BR)CBO* V(BR)EBO* ICBO* IEBO* VCE(sat)* VBE(sat)* hFE* Collector - Emitter Breakdown Voltage Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector - Base Cut-Off Current Emitter - Base Cut-Off Current Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage case Test Conditions IC = 100µA IC = 200µA IC = 0 VCB = 760V TCASE = 100°C VEB = 4V IC = 20mA IC = 20mA IC = 5mA IC = 20mA IB = 5.0mA IB = 5.0mA VCE = 10V VCE = 10V TCASE = -55°C IE = 50µA RBE = 1.0KΩ Min. Typ. Max. 1000 1000 5.0 10 30 10 10 12 100 20 1.8 1.0 180 - Unit V µA V V DC Current Gain DYNAMIC CHARACTERISTICS (T fT COBO Transition Frequency case =25°C unless otherwise stated) VCE = 10V VCB = 10V 10 MHz IC = 20mA f = 10MHz IE = 0 f = 1.0MHz Open Circuit Output Capacitance - - 30 pF * Pulse test tp = 300µs, δ < 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk DOC 7992 issue 1