2N5058

2N5058 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) NPN EPITAXIAL PLANAR BIPOLAR TRANSISTOR 6.10 (0.240) 6.60 (0.260) FEATURES 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. • SILICON PLANAR EPITAXIAL NPN TRANSISTOR • CECC SCREENING OPTIONS 5.08 (0.200) typ. • JAN LEVEL SCREENING OPTIONS 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 APPLICATIONS: • General Purpose Amplifier • High Voltage 45° TO–39 (TO-205AD) PACKAGE Underside View PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCEO VCBO VEBO IC PD PD TJ , TSTG Collector – Emitter Voltage (IB = 0) Collector – Base Voltage (IE = 0) Emitter – Base Voltage (IC = 0) Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range 300V 300V 7V 150mA 1.0W 6.67mW / °C 5.0W 33.3mW / °C –65 to +200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5530 Issue 1 2N5058 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions V(BR)CEO* V(BR)CBO V(BR)EBO ICBO IEBO VCE(sat)* VBE(sat)* VBE(on)* hFE* Collector – Emitter Breakdown Voltage IC = 30mA Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage Base – Emitter On Voltage DC Current Gain IC = 100µA IE = 100µA VCB = 100V IE = 0 VBE = 5V IC = 30mA IC = 30mA IC = 30mA IC = 5mA IC = 30mA IC = 100mA TA = +125°C IC = 0 IB = 3mA IB = 3mA VCE = 25V VCE = 25V VCE = 25V TA = -55°C VCE = 25V IB = 0 IE = 0 IC = 0 Min. 300 300 7.0 Typ. Max. Unit V 0.05 20 10 1.0 0.85 0.82 V µA nA 10 35 10 35 150 — SMALL SIGNAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions Min. ft Cob Cib Transistion Frequency Output Capacitance Input Capacitance 1 Typ. Max. Unit 160 10 75 MHz pF VCE = 25V VCB = 10V VBE = 0.5V IC = 10mA IE = 0 IC = 0 f = 20MHz f = 1MHz f = 1MHz 30 THERMAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter RθJC RθJA Thermal Resistance Junction To Case Thermal Resistance Junction To Ambient Min. Typ. Max. Unit 30 150 °C / W * Pulse Test: tp ≤ 300ms, d ≤ 2%. 1) ft is defined as the frequency at which |hfe| extrapolates to untity. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5530 Issue 1