2N5152

2N5152 2N5154 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) HIGH SPEED MEDIUM VOLTAGE SWITCHES 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. DESCRIPTION The 2N5152 and the 2N5154 are silicon expitaxial planar NPN transistors in jedec TO-39 metal case intended for use in switching applications. 2.54 (0.100) 5.08 (0.200) typ. 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 The complementary PNP types are the 2N5151 and 2N5153 respectively 45° TO-39 (TO-205AD) Pin 1 – Emitter Pin 2 – Base Pin 3 – Collector ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C unless otherwise stated) 2N5152 100V 80V 6V 5A 10A 1A 1W 10W 6.7W 2N5154 VCBO VCEO VEBO IC IC(PK) IB Ptot Collector – Base Voltage (IE = 0) Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Continuous Collector Current Peak Collector Current Base Current Total Dissipation at Tamb = 25°C Tcase = 50°C Tcase = 100°C Tstg Tj Operating and Storage Temperature Range Junction temperature –65 to +200°C 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3072 Issue 3 2N5152 2N5154 ELECTRICAL CHARACTERISTICS FOR 2N5152 (Tcase = 25°C unless otherwise stated) Parameter ICES ICEV ICEO IEBO Collector Cut Off Current Collector Cut Off Current Collector Cut Off Current Emitter Cut Off Current Test Conditions VCE = 60V VCE = 100V VCE = 60V VBE =- 2V VCE = 40V VEB = 5V VEB = 6V IC = 100mA IC = 2.5A IC = 5A IC = 2.5A IC = 5A IC = 2.5A IC = 50mA IC = 2.5A IC = 5A IB = 0 IC = 0 IC = 0 IB = 0 IB = 250mA IB = 500mA IB = 250mA IB = 500mA VCE = 5V VCE = 5V VCE = 5V Tc = -55°C VCE = 5v VCB = 10V VCE = 5V VCE = 5v VCC = 30v VCC = 30V VBE = 0 VBE = 0 Tcase = 150°C Min. Typ. Max. 1 1 500 50 1 1 Unit µA mA µA µA mA VCEO(SUS)* Collector Emitter Saturation Voltage VCE(sat)* VBE(sat)* VBE* Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Base Emitter Voltage 80 0.75 1.5 1.45 2.2 1.45 20 30 15 20 250 20 3 0.5 1.3 µs µs pF 90 V hFE* DC Current Gain CCBO Collector Base Capacitance IE = 0 f = 1MHz IC = 0.1A f = 1KHz IC = 0.5A f = 20MHz IC = 5A IB1 = 0.5A IC = 5A IB1=-IB2 = 0.5A hFE Small Signal Current Gain ton toff Turn On Time Turn Off Time * Pulse test tp = 300µs , δ < 2% THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 15 175 °C/W °C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3072 Issue 3 2N5152 2N5154 ELECTRICAL CHARACTERISTICS FOR 2N5154 (Tcase = 25°C unless otherwise stated) Parameter ICES ICEV ICEO IEBO Collector Cut Off Current Collector Cut Off Current Collector Cut Off Current Emitter Cut Off Current Test Conditions VCE = 60V VCE = 100V VCE = 60V VBE =- 2V VCE = 40V VEB = 5V VEB = 6V IC = 100mA IC = 2.5A IC = 5A IC = 2.5A IC = 5A IC = 2.5A IC = 50mA IC = 2.5A IC = 5A IB = 0 IC = 0 IC = 0 IB = 0 IB = 250mA IB = 500mA IB = 250mA IB = 500mA VCE = 5V VCE = 5V VCE = 5V Tc = -55°C VCE = 5v VCB = 10V VCE = 5V VCE = 5v VCC = 30v VCC = 30V VBE = 0 VBE = 0 Tcase = 150°C Min. Typ. Max. 1 1 500 50 1 1 Unit µA mA µA µA mA VCEO(SUS)* Collector Emitter Saturation Voltage VCE(sat)* VBE(sat)* VBE* Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Base Emitter Voltage 80 0.75 1.5 1.45 2.2 1.45 50 70 35 40 250 50 3.5 0.5 1.3 µs µs pF 200 V hFE* DC Current Gain CCBO Collector Base Capacitance IE = 0 f = 1MHz IC = 0.1A f = 1KHz IC = 0.5A f = 20MHz IC = 5A IB1 = 0.5A IC = 5A IB1=-IB2 = 0.5A hFE Small Signal Current Gain ton toff Turn On Time Turn Off Time * Pulse test tp = 300µs , δ < 2% THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 15 175 °C/W °C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3072 Issue 3