2N5154N1B_11

SILICON EPITAXIAL NPN TRANSISTOR 2N5154N1B • • Hermetic Ceramic Surface Mount SMD0.5 Package High Reliability and Space Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICM PD TJ Tstg Collector – Base Voltage (IE = 0) Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage Continuous Collector Current Peak Collector Current (1) TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 100V 80V 5.5V 2A 10A 70W 400 mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols RθJC (1) Parameters Thermal Resistance, Junction To Case (TC = 25°C) This value applies for Pw ≤ 8.3ms, duty cycle ≤ 1%. Min. Typ. Max. 2.5 Units °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 9104 Issue 2 Page 1 of 3 Website: http://www.semelab-tt.com SILICON EPITAXIAL NPN TRANSISTOR 2N5154N1B ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols V(BR)CEO ICES (2) Parameters Collector-Emitter Breakdown Voltage Collector Cut-Off Current Test Conditions IC = 10mA VCE = 60V VCE = 100V VCE = 60V VBE = 0 VBE = 0 VBE = -2V TC = 150°C VCE = 40V VEB = 4V VEB = 5.5V IC = 50mA IB = 0 IC = 0 IC = 0 VCE = 5V VCE = 5V TC = -55°C IC = 5A VCE = 5V VCE = 5V IB = 250mA IB = 500mA IB = 250mA IB = 500mA Min. 80 Typ Max. Units V 1.0 1.0 25 50 1.0 1.0 50 70 25 40 1.45 1.45 2.2 0.75 1.5 200 µA mA ICEX ICEO IEBO Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current µA mA hFE (2) Forward-current transfer ratio IC = 2.5A - VBE (2) Base-Emitter Voltage (2) IC = 2.5 A IC = 2.5A IC = 5A IC = 2.5A IC = 5A VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage V VCE(sat) (2) DYNAMIC CHARACTERISTICS  hfe Magnitude of commonemitter, small-signal shortcircuit, forward-current transfer ratio Small-Signal Current Gain IC = 500mA f = 20MHz IC = 100mA f = 1.0 KHz Output Capacitance Turn-On Time Storage Time Fall Time Turn-Off Time VCB = 10V f = 1.0MHz VCC = 30V IB1 = 500mA IC = 5A IB2 = - IB1 RL = 6Ω 0.5 1.4 0.5 1.5 µS IE = 0 250 pF VCE = 5V 50 VCE = 5V 1.2 - hfe Cobo ton ts tf toff Notes Notes (2) Pulse Width ≤ 300us, δ ≤ 2% S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 9104 Issue 2 Page 2 of 3 SILICON EPITAXIAL NPN TRANSISTOR 2N5154N1B MECHANICAL DATA Dimensions in mm (inches) 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 2.41 (0.095) 0.127 (0.005) 3.175 (0.125) Max. 3.05 (0.120) 1 3 10.16 (0.400) 0.127 (0.005) 0.76 (0.030) min. 5.72 (.225) 2 0.127 (0.005) 16 PLCS 0.50(0.020) 7.26 (0.286) 0.50 (0.020) max. SMD0.5 (TO 276AA S MD TOSMD0.5 ( TO-276AA) Pad 1 - Base Pad 2 – Collector Pad 3 - Emitter S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 9104 Issue 2 Page 3 of 3