2N5320

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N5320 • • • Low VCE(sat), hFE 30-130 (@VCE=4V, IC=0.5A) Hermetic TO-39 Metal package. Ideally Suited For Medium Power Amplifier And Switching Applications Screening Options Available • ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB PD PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Base Current TA = 25°C Total Power Dissipation at Derate Above 25°C TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 100V 75V 7V 2A 1.0A 1.0W 5.71mW/°C 7W 40mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols RθJA RθJC Parameters Thermal Resistance, Junction To Ambient Thermal Resistance, Junction To Case Min. Typ. Max. 175 25 Units °C/W °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 8582 Issue 1 Page 1 of 3 Website: http://www.semelab-tt.com SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N5320 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols V(BR)CEO (1) Parameters Collector-Emitter Breakdown Voltage Collector Cut-Off Current Test Conditions IC = 10mA VCE = 100V IB = 0 VBE = -1.5V VBE = -1.5V TA = 150°C IC = 0 VCE = 4V VCE = 2V IB = 50mA VCE = 4V Min. 75 Typ Max. Units V 100 5 100 30 10 0.5 1.1 130 µA mA µA ICEX VCE = 70V VEB = 7V IC = 500mA IC = 1.0A IC = 500mA IC = 500mA IEBO hFE (1) Emitter Cut-Off Current Forward-current transfer ratio (1) VCE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter Voltage (1) V DYNAMIC CHARACTERISTICS | hfe | Small signal forward-current transfer ratio Turn-On Time IC = 50mA f = 10MHz IC = 500mA IB1 = 50mA IC = 500mA VCC = 30V IB1 = - IB2 = 50mA VCC = 30V 80 ns 800 VCE = 4V 5 ton toff Turn-Off Time Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8582 Issue 1 Page 2 of 3 SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N5320 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 3 45° TO-39 (TO-205AD) METAL PACKAGE Underside View Pin 1 - Emitter Pin 2 - Base Pin 3 - Collector S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8582 Issue 1 Page 3 of 3